Datasheets
T2N7002BK by: Toshiba America Electronic Components

Small Signal MOS FET (Single)

Part Details for T2N7002BK by Toshiba America Electronic Components

Results Overview of T2N7002BK by Toshiba America Electronic Components

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T2N7002BK Information

T2N7002BK by Toshiba America Electronic Components is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for T2N7002BK

Part # Distributor Description Stock Price Buy
DISTI # T2N7002BK
TME Transistor: N-MOSFET, unipolar, 60V, 0.4A, Idm: 1.2A, 320mW, SOT23 Min Qty: 20 2275
  • 20 $0.0535
  • 100 $0.0420
  • 500 $0.0371
  • 3,000 $0.0333
  • 12,000 $0.0311
$0.0311 / $0.0535 Buy Now
Vyrian Transistors 43513
RFQ
Win Source Electronics   106000
  • 3,850 $0.0150
  • 9,095 $0.0127
  • 13,640 $0.0127
  • 20,000 $0.0116
  • 25,000 $0.0116
  • 33,335 $0.0104
$0.0104 / $0.0150 Buy Now

Part Details for T2N7002BK

T2N7002BK CAD Models

T2N7002BK Part Data Attributes

T2N7002BK Toshiba America Electronic Components
Buy Now Datasheet
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T2N7002BK Toshiba America Electronic Components Small Signal MOS FET (Single)
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description SOT-23, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Toshiba
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.4 A
Drain-source On Resistance-Max 1.75 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1.3 pF
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for T2N7002BK

This table gives cross-reference parts and alternative options found for T2N7002BK. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of T2N7002BK, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SSM3K7002KF Toshiba America Electronic Components Check for Price SMALL SIGNAL, FET T2N7002BK vs SSM3K7002KF
SSM3K7002BFU(T5L,F) Toshiba America Electronic Components Check for Price TRANSISTOR 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, USM, 2-2E1E, SC-70, 3 PIN, FET General Purpose Small Signal T2N7002BK vs SSM3K7002BFU(T5L,F)
SSM3K7002BS Toshiba America Electronic Components Check for Price SMALL SIGNAL, FET T2N7002BK vs SSM3K7002BS
SSM3K7002KF,LF(T Toshiba America Electronic Components Check for Price Small Signal Field-Effect Transistor T2N7002BK vs SSM3K7002KF,LF(T

T2N7002BK Related Parts

T2N7002BK Frequently Asked Questions (FAQ)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.

  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines, and to derate the device's power dissipation according to the ambient temperature.

  • The maximum allowable power dissipation for the T2N7002BK is 2.5W at a junction temperature of 150°C. However, it's recommended to derate the power dissipation based on the ambient temperature and thermal design.

  • Yes, the T2N7002BK can be used in switching regulator applications due to its low RDS(on) and high-speed switching capabilities. However, it's essential to ensure that the device is properly driven and that the switching frequency is within the recommended range.

  • Toshiba recommends using a drive circuit with a high-current capability and a low output impedance to ensure fast switching times and minimal power loss. A gate resistor value between 10Ω to 100Ω is recommended.

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