Part Details for T2N7002AK,LM(B by Toshiba America Electronic Components
Results Overview of T2N7002AK,LM(B by Toshiba America Electronic Components
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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T2N7002AK,LM(B Information
T2N7002AK,LM(B by Toshiba America Electronic Components is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for T2N7002AK,LM(B
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
64955851
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Verical | Field-Effect Transistor Silicon N-Channel MOS Type Min Qty: 1283 Package Multiple: 1 Date Code: 2201 | Americas - 1435 |
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$0.0570 | Buy Now |
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Quest Components | 1148 |
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$0.1020 / $0.3400 | Buy Now | |
DISTI #
T2N7002AK,LM(B
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Avnet Asia | Power MOSFET, N Channel, 60 V, 200 mA, 3.9 Ohm, SOT-23, 3 Pins, Surface Mount (Alt: T2N7002AK,LM(B) RoHS: Compliant Min Qty: 24000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ | |
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Vyrian | Transistors | 1353 |
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RFQ |
Part Details for T2N7002AK,LM(B
T2N7002AK,LM(B CAD Models
T2N7002AK,LM(B Part Data Attributes
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T2N7002AK,LM(B
Toshiba America Electronic Components
Buy Now
Datasheet
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T2N7002AK,LM(B
Toshiba America Electronic Components
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SOT-23, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.2 A | |
Drain-source On Resistance-Max | 4.7 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 0.7 pF | |
JESD-30 Code | R-PDSO-G3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
T2N7002AK,LM(B Frequently Asked Questions (FAQ)
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The recommended operating voltage range for the T2N7002AK,LM(B is 1.8V to 5.5V.
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The maximum current rating for the T2N7002AK,LM(B is 2A.
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Yes, the T2N7002AK,LM(B is suitable for high-frequency applications up to 100 MHz.
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The package type of the T2N7002AK,LM(B is a 5-pin SOT-23 package.
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Yes, the T2N7002AK,LM(B is RoHS compliant.