Datasheets
SUP85N10-10-E3 by:

Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB

Part Details for SUP85N10-10-E3 by Vishay Siliconix

Results Overview of SUP85N10-10-E3 by Vishay Siliconix

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SUP85N10-10-E3 Information

SUP85N10-10-E3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SUP85N10-10-E3

Part # Distributor Description Stock Price Buy
DISTI # SUP85N10-10-E3-ND
DigiKey MOSFET N-CH 100V 85A TO220AB Min Qty: 1 Lead time: 15 Weeks Container: Tube 305
In Stock
  • 1 $6.5000
  • 50 $3.1060
  • 100 $3.0498
  • 500 $2.9806
  • 1,000 $2.9750
$2.9750 / $6.5000 Buy Now
Quest Components 85 A, 100 V, 0.0105 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB 2
  • 1 $3.4200
$3.4200 Buy Now
New Advantage Corporation Single N-Channel 20 V 0.0014 Ohms Flange Mount Power Mosfet - TO-220AB RoHS: Compliant Min Qty: 1 Package Multiple: 50 300
  • 100 $2.7700
  • 300 $2.5500
$2.5500 / $2.7700 Buy Now

Part Details for SUP85N10-10-E3

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SUP85N10-10-E3 Part Data Attributes

SUP85N10-10-E3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SUP85N10-10-E3 Vishay Siliconix Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 280 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 85 A
Drain-source On Resistance-Max 0.0105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 240 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for SUP85N10-10-E3

This table gives cross-reference parts and alternative options found for SUP85N10-10-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUP85N10-10-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SUP85N10-10-E3 Vishay Intertechnologies $3.2851 Power Field-Effect Transistor, 85A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 SUP85N10-10-E3 vs SUP85N10-10-E3
Part Number Manufacturer Composite Price Description Compare
IRF512 Motorola Mobility LLC Check for Price 3.5A, 100V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB SUP85N10-10-E3 vs IRF512
AP80T10GP-HF Advanced Power Electronics Corp Check for Price TRANSISTOR 80 A, 100 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power SUP85N10-10-E3 vs AP80T10GP-HF
IRF513-010 International Rectifier Check for Price Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET SUP85N10-10-E3 vs IRF513-010
IRF540N Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB SUP85N10-10-E3 vs IRF540N
IRF511-001 International Rectifier Check for Price Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET SUP85N10-10-E3 vs IRF511-001
SUM110N08-07-E3 Vishay Siliconix Check for Price Power Field-Effect Transistor, 110A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN SUP85N10-10-E3 vs SUM110N08-07-E3
IRF513-009 International Rectifier Check for Price Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET SUP85N10-10-E3 vs IRF513-009
SUM90N08-4M8P-E3 Vishay Siliconix Check for Price TRANSISTOR 90 A, 75 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power SUP85N10-10-E3 vs SUM90N08-4M8P-E3
IRF540N Motorola Mobility LLC Check for Price 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB SUP85N10-10-E3 vs IRF540N
IRF512-010 International Rectifier Check for Price Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET SUP85N10-10-E3 vs IRF512-010

SUP85N10-10-E3 Related Parts

SUP85N10-10-E3 Frequently Asked Questions (FAQ)

  • The recommended storage condition for SUP85N10-10-E3 is in a dry, cool place, away from direct sunlight and moisture. The storage temperature should be between -40°C to 125°C.

  • Yes, SUP85N10-10-E3 is suitable for high-reliability applications due to its high-quality construction and rigorous testing. However, it's essential to follow proper design, assembly, and testing procedures to ensure the component meets the required reliability standards.

  • To prevent electrostatic discharge (ESD) damage, handle SUP85N10-10-E3 components in an ESD-protected environment, wear ESD-protective clothing, and use ESD-safe tools and equipment. Ground yourself before handling the component, and avoid touching the component's leads or pins.

  • The maximum allowable voltage derating for SUP85N10-10-E3 is 80% of the rated voltage. Exceeding this derating may reduce the component's lifespan or cause premature failure.

  • SUP85N10-10-E3 is rated for operation up to 150°C. However, it's essential to consider the component's power dissipation, thermal resistance, and surrounding environment to ensure reliable operation at high temperatures.

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