Part Details for SUP80090E-GE3 by Vishay Intertechnologies
Results Overview of SUP80090E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
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Renewable Energy
Automotive
SUP80090E-GE3 Information
SUP80090E-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SUP80090E-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86Y1094
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Newark | Mosfet, N-Ch, 150V, 128A, 175Deg C, 375W, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:128A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Vishay SUP80090E-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 739 |
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$1.2200 | Buy Now |
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DISTI #
86Y1094
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Avnet Americas | N-CHANNEL 150-V (D-S) MOSFET - Bulk (Alt: 86Y1094) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 56 Weeks, 4 Days Container: Bulk | 739 Partner Stock |
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$1.8700 / $3.6600 | Buy Now |
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DISTI #
SUP80090E-GE3
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Avnet Americas | N-CHANNEL 150-V (D-S) MOSFET - Tape and Reel (Alt: SUP80090E-GE3) RoHS: Not Compliant Min Qty: 500 Package Multiple: 500 Lead time: 28 Weeks, 0 Days Container: Reel | 0 |
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$1.3056 / $1.3750 | Buy Now |
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DISTI #
78-SUP80090E-GE3
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Mouser Electronics | MOSFETs 150V Vds 20V Vgs TO-220 RoHS: Compliant | 1702 |
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$1.3700 / $3.7400 | Buy Now |
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DISTI #
78449440
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Verical | Trans MOSFET N-CH 150V 128A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 41 Package Multiple: 1 | Americas - 739 |
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$1.7080 | Buy Now |
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DISTI #
86921274
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Verical | Trans MOSFET N-CH 150V 128A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 4 Package Multiple: 1 Date Code: 2444 | Americas - 630 |
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$1.4882 / $3.1742 | Buy Now |
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DISTI #
SUP80090E-GE3
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TME | Transistor: N-MOSFET, unipolar, 150V, 74A, 125W, TO220AB Min Qty: 1 | 0 |
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$1.8600 / $2.6300 | RFQ |
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DISTI #
SUP80090E-GE3
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EBV Elektronik | NCHANNEL 150V DS MOSFET (Alt: SUP80090E-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 29 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SUP80090E-GE3
SUP80090E-GE3 CAD Models
SUP80090E-GE3 Part Data Attributes
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SUP80090E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SUP80090E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 128A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 56 Weeks, 4 Days | |
| Date Of Intro | 2016-05-02 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 128 A | |
| Drain-source On Resistance-Max | 0.011 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SUP80090E-GE3 Frequently Asked Questions (FAQ)
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The recommended storage condition for SUP80090E-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
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To prevent electrostatic discharge (ESD) damage, handle SUP80090E-GE3 with an anti-static wrist strap or mat, and ensure all equipment is grounded. Avoid touching the component pins or leads.
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The recommended soldering profile for SUP80090E-GE3 is a peak temperature of 260°C for 10-15 seconds, with a ramp-up rate of 3°C/s and a cooling rate of 6°C/s.
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Yes, SUP80090E-GE3 is suitable for high-reliability applications due to its high-quality materials and manufacturing process. However, it's essential to follow proper handling, storage, and soldering procedures to ensure reliability.
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The power rating of SUP80090E-GE3 can be determined by considering the maximum voltage, current, and power dissipation specified in the datasheet. Ensure that the component is operated within these ratings to prevent overheating or damage.