Datasheets
SUP75P05-08-E3 by:

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Details for SUP75P05-08-E3 by Vishay Intertechnologies

Results Overview of SUP75P05-08-E3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SUP75P05-08-E3 Information

SUP75P05-08-E3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for SUP75P05-08-E3

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SUP75P05-08-E3 Part Data Attributes

SUP75P05-08-E3 Vishay Intertechnologies
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SUP75P05-08-E3 Vishay Intertechnologies Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TO-220AB, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 240 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for SUP75P05-08-E3

This table gives cross-reference parts and alternative options found for SUP75P05-08-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUP75P05-08-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
AP6679GJ Advanced Power Electronics Corp Check for Price TRANSISTOR 75 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power SUP75P05-08-E3 vs AP6679GJ
AP9575GS Advanced Power Electronics Corp Check for Price TRANSISTOR 16 A, 60 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power SUP75P05-08-E3 vs AP9575GS
AP9575AGJ Advanced Power Electronics Corp Check for Price TRANSISTOR 17 A, 60 V, 0.064 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power SUP75P05-08-E3 vs AP9575AGJ
AP6679GS-HF Advanced Power Electronics Corp Check for Price TRANSISTOR POWER, FET, FET General Purpose Power SUP75P05-08-E3 vs AP6679GS-HF
SUD45P03-09-GE3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 45A I(D), 30V, 0.0087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 SUP75P05-08-E3 vs SUD45P03-09-GE3
AP4407S Advanced Power Electronics Corp Check for Price TRANSISTOR 50 A, 30 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN, FET General Purpose Power SUP75P05-08-E3 vs AP4407S
FDD6685_NL Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN SUP75P05-08-E3 vs FDD6685_NL
AP13P15GP Advanced Power Electronics Corp Check for Price TRANSISTOR 13 A, 150 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power SUP75P05-08-E3 vs AP13P15GP
SUD45P03-09-GE3 Vishay Siliconix Check for Price TRANSISTOR 45 A, 30 V, 0.0087 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power SUP75P05-08-E3 vs SUD45P03-09-GE3
SUD45P03-10-E3 Vishay Siliconix Check for Price TRANSISTOR 15 A, 30 V, 0.018 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, LEAD FREE PACKAGE-3, FET General Purpose Power SUP75P05-08-E3 vs SUD45P03-10-E3

SUP75P05-08-E3 Related Parts

SUP75P05-08-E3 Frequently Asked Questions (FAQ)

  • The recommended land pattern for the SUP75P05-08-E3 is a rectangular pad with a size of 2.5 mm x 1.5 mm, with a solder mask clearance of 0.2 mm around the pad.

  • To ensure reliable soldering, use a soldering iron with a temperature of 250°C to 270°C, and apply a small amount of solder paste to the pads. Use a soldering technique that minimizes the risk of overheating the component.

  • The maximum operating temperature range for the SUP75P05-08-E3 is -55°C to 150°C, with a storage temperature range of -55°C to 150°C.

  • Handle the SUP75P05-08-E3 by the body, avoiding touching the leads or the glass passivation layer. Use anti-static precautions when handling the component to prevent damage from electrostatic discharge.

  • The recommended cleaning process for the SUP75P05-08-E3 involves using a mild detergent and deionized water, followed by a rinse with deionized water and a dry with a lint-free cloth or air blow.

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