Part Details for SUP60N06-18 by Vishay Siliconix
Results Overview of SUP60N06-18 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
SUP60N06-18 Information
SUP60N06-18 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SUP60N06-18
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 102 |
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RFQ | ||
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Quest Components | 60 A, 60 V, 0.018 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB | 88 |
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$5.5500 / $9.0000 | Buy Now |
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Chip 1 Exchange | INSTOCK | 3794 |
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RFQ |
Part Details for SUP60N06-18
SUP60N06-18 CAD Models
SUP60N06-18 Part Data Attributes
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SUP60N06-18
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SUP60N06-18
Vishay Siliconix
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SILICONIX INC | |
| Part Package Code | TO-220AB | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 60 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 120 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) |
Alternate Parts for SUP60N06-18
This table gives cross-reference parts and alternative options found for SUP60N06-18. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUP60N06-18, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF450PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | SUP60N06-18 vs IRF450PBF |
| SSH25N40A | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 25A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | SUP60N06-18 vs SSH25N40A |
| SSS10N60A | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 5.1A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | SUP60N06-18 vs SSS10N60A |
| FQP4N50 | Rochester Electronics LLC | Check for Price | Power Field-Effect Transistor | SUP60N06-18 vs FQP4N50 |
| SSF8N90A | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 900V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | SUP60N06-18 vs SSF8N90A |
| FQB6N40C | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | SUP60N06-18 vs FQB6N40C |
| SPD28N03 | Siemens | Check for Price | Power Field-Effect Transistor, 28A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | SUP60N06-18 vs SPD28N03 |
| SSP5N80A | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | SUP60N06-18 vs SSP5N80A |
| IRFUC20PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE PACKAGE-3 | SUP60N06-18 vs IRFUC20PBF |
| SSS3N80A | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 2A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | SUP60N06-18 vs SSS3N80A |