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Transistors / Power Field-Effect Transistors / SUM90N10-8M2P-E3
Datasheets
SUM90N10-8M2P-E3 by:

Power Field-Effect Transistor, 90A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, ROHS COMPLIANT PACKAGE-3

Part Details for SUM90N10-8M2P-E3 by Vishay Intertechnologies

Results Overview of SUM90N10-8M2P-E3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SUM90N10-8M2P-E3 Information

SUM90N10-8M2P-E3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SUM90N10-8M2P-E3

Part # Distributor Description Stock Price Buy
DISTI # 55R1943
Newark Mosfet, N Channel, 100V, 90A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:90A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Vishay SUM90N10-8M2P-E3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 670
  • 1 $4.9800
  • 10 $3.6000
  • 25 $3.5900
  • 50 $3.1500
  • 100 $2.7200
  • 500 $2.6300
  • 1,000 $2.5000
$2.5000 / $4.9800 Buy Now
DISTI # SUM90N10-8M2P-E3
Avnet Americas N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SUM90N10-8M2P-E3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 111 Weeks, 0 Days Container: Reel 12800
  • 800 $2.2750
  • 1,600 $2.2386
  • 3,200 $2.2034
  • 4,800 $2.1667
  • 6,400 $2.1412
$2.1412 / $2.2750 Buy Now
DISTI # 781-SUM90N10-8M2P-E3
Mouser Electronics MOSFETs 100V 90A 300W RoHS: Compliant 779
  • 1 $5.2200
  • 10 $3.6600
  • 25 $3.6100
  • 100 $2.6900
  • 250 $2.6800
  • 500 $2.6200
  • 800 $2.2700
$2.2700 / $5.2200 Buy Now
DISTI # E02:0323_00531284
Arrow Electronics Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) D2PAK Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks Europe - 1600
  • 800 $1.8311
$1.8311 Buy Now
DISTI # V72:2272_09215484
Arrow Electronics Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) D2PAK Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2421 Container: Cut Strips Americas - 525
  • 1 $4.5070
  • 10 $3.4250
  • 25 $3.1230
  • 100 $2.5890
  • 250 $2.5180
  • 500 $2.1290
$2.1290 / $4.5070 Buy Now
Future Electronics Single N-Channel 100 V 0.0082 Ω 97 nC Surface Mount Power Mosfet -TO-263 (D2PAK) RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 800
Reel
  • 800 $1.6300
  • 1,600 $1.6200
  • 2,400 $1.6100
$1.6100 / $1.6300 Buy Now
DISTI # 12657434
Verical Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) D2PAK Min Qty: 800 Package Multiple: 800 Americas - 1600
  • 800 $1.9515
$1.9515 Buy Now
DISTI # 84378706
Verical Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) D2PAK Min Qty: 800 Package Multiple: 800 Date Code: 2421 Americas - 800
  • 800 $2.5354
$2.5354 Buy Now
DISTI # 82024266
Verical Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) D2PAK Min Qty: 4 Package Multiple: 1 Date Code: 2421 Americas - 525
  • 4 $4.5070
  • 10 $3.4250
  • 25 $3.1230
  • 100 $2.5890
  • 250 $2.5180
  • 500 $2.1290
$2.1290 / $4.5070 Buy Now
Bristol Electronics   288
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 90A I(D), 100V, 0.0082OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263 315
  • 1 $4.2075
  • 25 $2.8050
  • 90 $2.5946
$2.5946 / $4.2075 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 90A I(D), 100V, 0.0082OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263 230
  • 1 $4.2075
  • 25 $2.8050
  • 90 $2.5946
$2.5946 / $4.2075 Buy Now
DISTI # SUM90N10-8M2P-E3
TTI MOSFETs 100V 90A 300W pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel Americas - 52000
In Stock
  • 800 $1.7600
  • 1,600 $1.7300
  • 2,400 $1.6900
$1.6900 / $1.7600 Buy Now
DISTI # SUM90N10-8M2P-E3.
TTI MOSFETs TO263 100V 90A N-CH MOSFET pbFree: Pb-Free Min Qty: 10 Package Multiple: 10 Container: Cut Tape Americas - 500
In Stock
  • 10 $2.5800
$2.5800 Buy Now
Future Electronics Single N-Channel 100 V 0.0082 O 97 nC Surface Mount Power Mosfet -TO-263 (D2PAK) Min Qty: 800 Package Multiple: 800 800
null
  • 800 $1.6300
  • 1,600 $1.6200
  • 2,400 $1.6100
$1.6100 / $1.6300 Buy Now
DISTI # SUM90N10-8M2P-E3
TME Transistor: N-MOSFET, unipolar, 100V, 90A, Idm: 240A, 300W Min Qty: 1 576
  • 1 $3.6900
  • 10 $3.1500
  • 100 $2.5900
  • 500 $2.2000
  • 800 $2.0800
  • 1,600 $1.9100
$1.9100 / $3.6900 Buy Now
Chip 1 Exchange INSTOCK 132030
RFQ
DISTI # SUM90N10-8M2P-E3
Avnet Asia N-CHANNEL 100-V (D-S) MOSFET (Alt: SUM90N10-8M2P-E3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 15 Weeks, 0 Days 0
RFQ
DISTI # SUM90N10-8M2P-E3
EBV Elektronik NCHANNEL 100V DS MOSFET (Alt: SUM90N10-8M2P-E3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
LCSC 100V 70A 0.008210V20A 4.5V TO-263 MOSFETs ROHS 608
  • 1 $2.7579
  • 10 $2.3506
  • 30 $2.0956
  • 100 $1.8346
  • 500 $1.7154
  • 800 $1.6641
$1.6641 / $2.7579 Buy Now
Vyrian Transistors 6446
RFQ

Part Details for SUM90N10-8M2P-E3

SUM90N10-8M2P-E3 CAD Models

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SUM90N10-8M2P-E3 Part Data Attributes

Parametric Data
SUM90N10-8M2P-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SUM90N10-8M2P-E3 Vishay Intertechnologies Power Field-Effect Transistor, 90A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, ROHS COMPLIANT PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 111 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 180 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 90 A
Drain-source On Resistance-Max 0.0082 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 240 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SUM90N10-8M2P-E3

This table gives cross-reference parts and alternative options found for SUM90N10-8M2P-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUM90N10-8M2P-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF513 Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 3.5A I(D), 60V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB SUM90N10-8M2P-E3 vs IRF513
SUP90N08-8M2P-E3 Vishay Siliconix Check for Price TRANSISTOR 90 A, 75 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power SUM90N10-8M2P-E3 vs SUP90N08-8M2P-E3
IRF540N Infineon Technologies AG Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN SUM90N10-8M2P-E3 vs IRF540N
IRF513-010 International Rectifier Check for Price Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET SUM90N10-8M2P-E3 vs IRF513-010
IRF513-001 International Rectifier Check for Price Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET SUM90N10-8M2P-E3 vs IRF513-001
SUM90N08-4M8P-E3 Vishay Siliconix Check for Price TRANSISTOR 90 A, 75 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power SUM90N10-8M2P-E3 vs SUM90N08-4M8P-E3
RFP2N10 Harris Semiconductor Check for Price Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB SUM90N10-8M2P-E3 vs RFP2N10
IRF540NPBF International Rectifier Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 SUM90N10-8M2P-E3 vs IRF540NPBF
IRF2807 International Rectifier Check for Price Power Field-Effect Transistor, 82A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN SUM90N10-8M2P-E3 vs IRF2807
SUM90N10-8M2P-E3 Vishay Siliconix Check for Price TRANSISTOR 90 A, 100 V, 0.0082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power SUM90N10-8M2P-E3 vs SUM90N10-8M2P-E3

SUM90N10-8M2P-E3 Related Parts

SUM90N10-8M2P-E3 Frequently Asked Questions (FAQ)

  • The recommended land pattern for SUM90N10-8M2P-E3 is a rectangular pad with a size of 2.5mm x 1.5mm, with a solder mask clearance of 0.2mm.

  • Yes, SUM90N10-8M2P-E3 is rated for operation up to 150°C, making it suitable for high-temperature applications. However, the maximum operating temperature should not exceed 150°C to ensure reliable operation.

  • The maximum surge current rating for SUM90N10-8M2P-E3 is 100A for 10ms, as specified in the datasheet. Exceeding this rating may damage the device.

  • Yes, SUM90N10-8M2P-E3 is compatible with lead-free soldering processes, including SAC305 and Sn96.5Ag3Cu0.5. However, the soldering profile should be optimized to prevent thermal damage to the device.

  • The typical junction-to-case thermal resistance of SUM90N10-8M2P-E3 is 1.5°C/W. This value can be used to estimate the junction temperature of the device under different operating conditions.

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