Part Details for SUM70N03-09CP-E3 by Vishay Intertechnologies
Results Overview of SUM70N03-09CP-E3 by Vishay Intertechnologies
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
SUM70N03-09CP-E3 Information
SUM70N03-09CP-E3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| MC68B09CP | Rochester Electronics LLC | MC6809 - 8 Bit Microprocessing Unit | |
| MC68A09CP | Rochester Electronics LLC | MC6809 - 8 Bit Microprocessing Unit | |
| MC6809CP | Rochester Electronics LLC | MC6809 - 8-Bit Microprocessing Unit |
Price & Stock for SUM70N03-09CP-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 179 |
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RFQ | ||
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Quest Components | 143 |
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$1.1296 / $2.2592 | Buy Now |
Part Details for SUM70N03-09CP-E3
SUM70N03-09CP-E3 CAD Models
SUM70N03-09CP-E3 Part Data Attributes
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SUM70N03-09CP-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SUM70N03-09CP-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 70A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | LEAD FREE, TO-263, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 70 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 93 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SUM70N03-09CP-E3
This table gives cross-reference parts and alternative options found for SUM70N03-09CP-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUM70N03-09CP-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF1104PBF | Infineon Technologies AG | $0.9790 | Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | SUM70N03-09CP-E3 vs IRF1104PBF |
| IRF1104 | International Rectifier | Check for Price | Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | SUM70N03-09CP-E3 vs IRF1104 |
| IRL1104LPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 104A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | SUM70N03-09CP-E3 vs IRL1104LPBF |
| SUD50N03-06P-E3 | Vishay Siliconix | Check for Price | TRANSISTOR 84 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | SUM70N03-09CP-E3 vs SUD50N03-06P-E3 |
| IRF1104 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | SUM70N03-09CP-E3 vs IRF1104 |
| STB60NE03L-10T4 | STMicroelectronics | Check for Price | 60A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | SUM70N03-09CP-E3 vs STB60NE03L-10T4 |
| STB60NE03L-10 | STMicroelectronics | Check for Price | 60A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | SUM70N03-09CP-E3 vs STB60NE03L-10 |
SUM70N03-09CP-E3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SUM70N03-09CP-E3 is a standard TO-220 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 4.5mm x 4.5mm.
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Yes, the SUM70N03-09CP-E3 is a high-reliability device that meets the requirements of AEC-Q101 and is suitable for use in automotive and other high-reliability applications.
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To ensure proper cooling, the SUM70N03-09CP-E3 should be mounted on a heat sink with a thermal resistance of less than 1°C/W, and the heat sink should be designed to provide adequate airflow.
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The maximum allowed voltage transient for the SUM70N03-09CP-E3 is 100V for a duration of less than 100ns, as specified in the datasheet.
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Yes, the SUM70N03-09CP-E3 can be used in a parallel configuration, but it is recommended to ensure that the devices are matched for Vgs(th) and Rds(on) to minimize current imbalance and ensure reliable operation.