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Part Details for SUM70030M-GE3 by Vishay Intertechnologies
Results Overview of SUM70030M-GE3 by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
SUM70030M-GE3 Information
SUM70030M-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SUM70030M-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
15AJ3257
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Newark | Mosfet, N-Ch, 100V, 150A, To-263 Rohs Compliant: Yes |Vishay SUM70030M-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$2.2100 / $4.5100 | Buy Now |
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DISTI #
SUM70030M-GE3
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Avnet Americas | N-CHANNEL 100-V (D-S) MOSFET - Rail/Tube (Alt: SUM70030M-GE3) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 21 Weeks, 0 Days Container: Tube | 0 |
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$1.4927 / $1.5860 | Buy Now |
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DISTI #
78-SUM70030M-GE3
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Mouser Electronics | MOSFETs TO263 100V 150A N-CH MOSFET RoHS: Compliant | 960 |
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$1.5800 / $4.2800 | Buy Now |
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DISTI #
E02:0323_16617272
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Arrow Electronics | Trans MOSFET N-CH 100V 150A 7-Pin(6+Tab) D2PAK Tube Min Qty: 800 Package Multiple: 800 Lead time: 78 Weeks | Europe - 800 |
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$1.5937 | Buy Now |
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DISTI #
82741944
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Verical | Trans MOSFET N-CH 100V 150A 7-Pin(6+Tab) D2PAK Tube Min Qty: 800 Package Multiple: 800 | Americas - 800 |
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$1.5943 | Buy Now |
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DISTI #
SUM70030M-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 100V, 150A, Idm: 500A Min Qty: 800 | 0 |
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$2.1600 | RFQ |
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DISTI #
SUM70030M-GE3
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EBV Elektronik | NCHANNEL 100V DS MOSFET (Alt: SUM70030M-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 22 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SUM70030M-GE3
SUM70030M-GE3 CAD Models
SUM70030M-GE3 Part Data Attributes
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SUM70030M-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SUM70030M-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 150 A | |
| Drain-source On Resistance-Max | 0.0035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 40 pF | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G6 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 500 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 130 ns | |
| Turn-on Time-Max (ton) | 86 ns |
SUM70030M-GE3 Frequently Asked Questions (FAQ)
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The recommended land pattern for the SUM70030M-GE3 can be found in the Vishay Intertechnologies' application note AN483, which provides guidelines for surface mount assembly of Vishay's power MOSFETs.
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To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and keeping the device within its specified operating temperature range.
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The SUM70030M-GE3 has an ESD rating of Human Body Model (HBM) ≥ 2 kV and Machine Model (MM) ≥ 200 V. To prevent ESD damage, it's recommended to follow standard ESD handling procedures, such as using wrist straps, anti-static bags, and ESD-safe workstations.
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Yes, the SUM70030M-GE3 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal gradients.
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The recommended gate drive circuits for the SUM70030M-GE3 can be found in the Vishay Intertechnologies' application note AN522, which provides guidelines for gate drive circuits for power MOSFETs.