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Part Details for SUG80050E-GE3 by Vishay Intertechnologies
Results Overview of SUG80050E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SUG80050E-GE3 Information
SUG80050E-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SUG80050E-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
15AC8716
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Newark | Mosfet, N-Ch, 150V, 100A, To-247, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:150V, On Resistance Rds(On):0.0045Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Vishay SUG80050E-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 8 |
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$2.4100 / $5.4300 | Buy Now |
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DISTI #
15AC8716
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Avnet Americas | N-CHANNEL 150-V (D-S) 175C MOSFET - Bulk (Alt: 15AC8716) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 1 Days Container: Bulk | 8 Partner Stock |
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$2.8700 / $5.5300 | Buy Now |
|
DISTI #
SUG80050E-GE3
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Avnet Americas | N-CHANNEL 150-V (D-S) 175C MOSFET - Tape and Reel (Alt: SUG80050E-GE3) RoHS: Not Compliant Min Qty: 500 Package Multiple: 500 Lead time: 28 Weeks, 0 Days Container: Reel | 0 |
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$2.1759 / $2.3119 | Buy Now |
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DISTI #
78-SUG80050E-GE3
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Mouser Electronics | MOSFETs 150V Vds 20V Vgs TO-247 RoHS: Compliant | 983 |
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$2.3100 / $5.4800 | Buy Now |
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DISTI #
SUG80050E-GE3
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TTI | MOSFETs 150V Vds 20V Vgs TO-247 pbFree: Pb-Free Min Qty: 500 Package Multiple: 500 Container: Reel | Americas - 0 |
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$2.2600 / $2.3900 | Buy Now |
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DISTI #
SUG80050E-GE3
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TTI | MOSFETs 150V Vds 20V Vgs TO-247 pbFree: Pb-Free Min Qty: 500 Package Multiple: 500 Container: Reel | Americas - 0 |
|
$2.2600 / $2.3900 | Buy Now |
|
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Future Electronics | MOSFET 150V Vds 20V Vgs TO-247 Min Qty: 25 Package Multiple: 25 |
1225 null |
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$2.4100 / $2.5500 | Buy Now |
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DISTI #
SUG80050E-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 150V, 100A, Idm: 300A Min Qty: 1 | 0 |
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$3.6200 / $5.4300 | RFQ |
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DISTI #
SUG80050E-GE3
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EBV Elektronik | NCHANNEL 150V DS 175C MOSFET (Alt: SUG80050E-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 29 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SUG80050E-GE3
SUG80050E-GE3 CAD Models
SUG80050E-GE3 Part Data Attributes
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SUG80050E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SUG80050E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 19 Weeks, 1 Day | |
| Date Of Intro | 2017-03-22 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0054 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 65 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 500 W | |
| Pulsed Drain Current-Max (IDM) | 300 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 191 ns | |
| Turn-on Time-Max (ton) | 93 ns |
SUG80050E-GE3 Frequently Asked Questions (FAQ)
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The recommended land pattern for the SUG80050E-GE3 can be found in the Vishay Intertechnologies' application note AN42172, which provides guidelines for PCB layout and assembly.
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The SUG80050E-GE3 has a thermal resistance of 2.5°C/W. To ensure proper thermal management, it is recommended to use a heat sink with a thermal interface material and to follow the guidelines outlined in the Vishay Intertechnologies' application note AN10273.
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The maximum operating temperature range for the SUG80050E-GE3 is -55°C to 175°C, as specified in the datasheet. However, it is recommended to derate the device's power handling capability at higher temperatures to ensure reliable operation.
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Yes, the SUG80050E-GE3 is designed for high-reliability applications and is qualified to the requirements of AEC-Q101, which ensures that the device meets the stringent requirements of the automotive industry.
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To ensure proper soldering of the SUG80050E-GE3, follow the recommended soldering profile outlined in the Vishay Intertechnologies' application note AN42171, which provides guidelines for reflow soldering and wave soldering.