Part Details for SUD90330E-GE3 by Vishay Intertechnologies
Results Overview of SUD90330E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SUD90330E-GE3 Information
SUD90330E-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SUD90330E-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
37AC0930
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Newark | Mosfet, N-Ch, 200V, 35.8A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:35.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay SUD90330E-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 74 |
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$0.7370 / $0.8710 | Buy Now |
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DISTI #
SUD90330E-GE3
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Avnet Americas | Power MOSFET, N Channel, 200 V, 35.8 A, 0.0312 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: SUD90330E-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 28 Weeks, 0 Days Container: Reel | 0 |
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$0.5460 / $0.5687 | Buy Now |
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DISTI #
78-SUD90330E-GE3
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Mouser Electronics | MOSFETs 200V Vds 20V Vgs TO-252 RoHS: Compliant | 24495 |
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$0.5900 / $1.6400 | Buy Now |
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DISTI #
86938900
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Verical | Trans MOSFET N-CH 200V 35.8A 3-Pin(2+Tab) TO-252AA Min Qty: 2000 Package Multiple: 2000 Date Code: 2445 | Americas - 2000 |
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$0.5994 / $1.0468 | Buy Now |
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Future Electronics | MOSFET N-CH 200V 35.8A TO252AA Min Qty: 2000 Package Multiple: 2000 |
16000 null |
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$0.5700 / $0.5850 | Buy Now |
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DISTI #
SUD90330E-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 200V, 35.8A, Idm: 70A Min Qty: 2000 | 0 |
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$0.8100 | RFQ |
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DISTI #
SMC-SUD90330E-GE3
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 1893 |
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RFQ | |
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DISTI #
SUD90330E-GE3
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Avnet Asia | Power MOSFET, N Channel, 200 V, 35.8 A, 0.0312 ohm, TO-252 (DPAK), Surface Mount (Alt: SUD90330E-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 31 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
SUD90330E-GE3
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EBV Elektronik | Power MOSFET N Channel 200 V 358 A 00312 ohm TO252 DPAK Surface Mount (Alt: SUD90330E-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 29 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 200V 35.8A 125W 37.5m10V12.2A 4V 1 N-channel TO-252AA MOSFETs ROHS | 6 |
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$0.9022 / $1.5253 | Buy Now |
Part Details for SUD90330E-GE3
SUD90330E-GE3 CAD Models
SUD90330E-GE3 Part Data Attributes
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SUD90330E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SUD90330E-GE3
Vishay Intertechnologies
POWER, FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 28 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 54.45 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 35.8 A | |
| Drain-source On Resistance-Max | 0.0375 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 11 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 94 ns | |
| Turn-on Time-Max (ton) | 74 ns |
SUD90330E-GE3 Frequently Asked Questions (FAQ)
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The recommended land pattern for the SUD90330E-GE3 can be found in the Vishay Intertechnologies' application note AN42172, which provides guidelines for PCB layout and assembly.
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The SUD90330E-GE3 has a thermal resistance of 2.5°C/W. To handle thermal management, ensure good airflow, use a heat sink if necessary, and follow the recommended PCB layout guidelines to minimize thermal impedance.
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The maximum operating temperature range for the SUD90330E-GE3 is -55°C to 150°C, as specified in the datasheet.
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Yes, the SUD90330E-GE3 is a high-reliability device, suitable for use in aerospace, defense, and other high-reliability applications. It is built with a robust design and undergoes rigorous testing to ensure its reliability.
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Follow the recommended soldering profile and guidelines provided in the datasheet, and ensure the PCB is designed with a solder mask to prevent solder bridging.