Datasheets
SUD70090E-GE3 by:

Power Field-Effect Transistor, 50A I(D), 100V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,

Part Details for SUD70090E-GE3 by Vishay Intertechnologies

Results Overview of SUD70090E-GE3 by Vishay Intertechnologies

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Applications Space Technology Aerospace and Defense Energy and Power Systems

SUD70090E-GE3 Information

SUD70090E-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SUD70090E-GE3

Part # Distributor Description Stock Price Buy
DISTI # 57AJ0779
Newark Mosfet, N-Ch, 100V, 50A, To-252 Rohs Compliant: Yes |Vishay SUD70090E-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 3578
  • 1 $2.0400
  • 10 $1.7700
  • 25 $1.6900
  • 50 $1.6100
  • 100 $1.5300
  • 250 $1.4600
  • 500 $1.4000
$1.4000 / $2.0400 Buy Now
DISTI # SUD70090E-GE3
Avnet Americas N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SUD70090E-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 28 Weeks, 0 Days Container: Reel 0
  • 2,000 $0.6362
  • 4,000 $0.6261
  • 8,000 $0.6169
  • 12,000 $0.6137
  • 16,000 $0.6106
$0.6106 / $0.6362 Buy Now
DISTI # 78-SUD70090E-GE3
Mouser Electronics MOSFETs 100V Vds 20V Vgs DPAK (TO-252) RoHS: Compliant 20622
  • 1 $1.2600
  • 10 $0.9970
  • 100 $0.8420
  • 500 $0.7790
  • 1,000 $0.7200
  • 2,000 $0.6710
  • 4,000 $0.6610
$0.6610 / $1.2600 Buy Now
DISTI # V72:2272_17583178
Arrow Electronics Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) DPAK Min Qty: 1 Package Multiple: 1 Lead time: 28 Weeks Date Code: 2404 Container: Cut Strips Americas - 1498
  • 1 $0.7667
  • 10 $0.7133
  • 25 $0.7062
  • 100 $0.7004
  • 250 $0.6947
  • 500 $0.6889
  • 1,000 $0.6832
$0.6832 / $0.7667 Buy Now
DISTI # 77793310
Verical Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) DPAK Min Qty: 9 Package Multiple: 1 Date Code: 2404 Americas - 1498
  • 9 $0.7133
  • 25 $0.7062
  • 100 $0.7004
  • 250 $0.6947
  • 500 $0.6889
  • 1,000 $0.6832
$0.6832 / $0.7133 Buy Now
DISTI # SUD70090E-GE3
TTI MOSFETs 100V Vds 20V Vgs DPAK (TO-252) RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel Americas - 2000
In Stock
  • 2,000 $0.6640
  • 4,000 $0.6480
  • 6,000 $0.6350
$0.6350 / $0.6640 Buy Now
DISTI # SUD70090E-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 100V, 50A, Idm: 120A Min Qty: 2000 0
  • 2,000 $1.3200
$1.3200 RFQ
DISTI # SUD70090E-GE3
IBS Electronics N-CHANNEL 100 V 8.9 MOHM 125 W SMT THUNDERFET POWER MOSFET - TO-252 Min Qty: 2000 Package Multiple: 1 8000
  • 2,000 $0.8775
  • 4,000 $0.8580
$0.8580 / $0.8775 Buy Now
DISTI # SUD70090E-GE3
Avnet Asia N-CHANNEL 100-V (D-S) MOSFET (Alt: SUD70090E-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 31 Weeks, 0 Days 0
  • 2,000 $1.0794
  • 4,000 $1.0644
  • 6,000 $1.0499
  • 10,000 $1.0357
  • 20,000 $1.0084
  • 50,000 $0.9826
  • 100,000 $0.9580
$0.9580 / $1.0794 Buy Now
DISTI # SUD70090E-GE3
EBV Elektronik NCHANNEL 100V DS MOSFET (Alt: SUD70090E-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 29 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 1784
RFQ

Part Details for SUD70090E-GE3

SUD70090E-GE3 CAD Models

SUD70090E-GE3 Part Data Attributes

SUD70090E-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SUD70090E-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 50A I(D), 100V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 28 Weeks
Date Of Intro 2016-05-01
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 80 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.0089 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

SUD70090E-GE3 Related Parts

SUD70090E-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SUD70090E-GE3 is a pad size of 5.5mm x 4.5mm with a 1.5mm x 1.5mm thermal pad in the center.

  • To ensure reliable soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a small amount of solder paste to the pads. Avoid applying excessive force or pressure during soldering.

  • The maximum operating temperature range for the SUD70090E-GE3 is -40°C to 150°C, with a maximum junction temperature of 150°C.

  • To handle ESD protection, use an ESD wrist strap or mat, and ensure that the device is stored in an anti-static bag or container. Avoid touching the device's pins or leads during handling.

  • The recommended storage condition for the SUD70090E-GE3 is in a dry, cool place with a relative humidity of 60% or less, and a temperature range of 20°C to 30°C.

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