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Power Field-Effect Transistor, 50A I(D), 100V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SUD70090E-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
57AJ0779
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Newark | Mosfet, N-Ch, 100V, 50A, To-252 Rohs Compliant: Yes |Vishay SUD70090E-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3578 |
|
$1.4000 / $2.0400 | Buy Now |
DISTI #
SUD70090E-GE3
|
Avnet Americas | N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SUD70090E-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 28 Weeks, 0 Days Container: Reel | 0 |
|
$0.6106 / $0.6362 | Buy Now |
DISTI #
78-SUD70090E-GE3
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Mouser Electronics | MOSFETs 100V Vds 20V Vgs DPAK (TO-252) RoHS: Compliant | 20622 |
|
$0.6610 / $1.2600 | Buy Now |
DISTI #
V72:2272_17583178
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Arrow Electronics | Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) DPAK Min Qty: 1 Package Multiple: 1 Lead time: 28 Weeks Date Code: 2404 Container: Cut Strips | Americas - 1498 |
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$0.6832 / $0.7667 | Buy Now |
DISTI #
77793310
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Verical | Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) DPAK Min Qty: 9 Package Multiple: 1 Date Code: 2404 | Americas - 1498 |
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$0.6832 / $0.7133 | Buy Now |
DISTI #
SUD70090E-GE3
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TTI | MOSFETs 100V Vds 20V Vgs DPAK (TO-252) RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel |
Americas - 2000 In Stock |
|
$0.6350 / $0.6640 | Buy Now |
DISTI #
SUD70090E-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 100V, 50A, Idm: 120A Min Qty: 2000 | 0 |
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$1.3200 | RFQ |
DISTI #
SUD70090E-GE3
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IBS Electronics | N-CHANNEL 100 V 8.9 MOHM 125 W SMT THUNDERFET POWER MOSFET - TO-252 Min Qty: 2000 Package Multiple: 1 | 8000 |
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$0.8580 / $0.8775 | Buy Now |
DISTI #
SUD70090E-GE3
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Avnet Asia | N-CHANNEL 100-V (D-S) MOSFET (Alt: SUD70090E-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 31 Weeks, 0 Days | 0 |
|
$0.9580 / $1.0794 | Buy Now |
DISTI #
SUD70090E-GE3
|
EBV Elektronik | NCHANNEL 100V DS MOSFET (Alt: SUD70090E-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 29 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
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SUD70090E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SUD70090E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 50A I(D), 100V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 28 Weeks | |
Date Of Intro | 2016-05-01 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 80 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.0089 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 120 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The recommended PCB footprint for the SUD70090E-GE3 is a pad size of 5.5mm x 4.5mm with a 1.5mm x 1.5mm thermal pad in the center.
To ensure reliable soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a small amount of solder paste to the pads. Avoid applying excessive force or pressure during soldering.
The maximum operating temperature range for the SUD70090E-GE3 is -40°C to 150°C, with a maximum junction temperature of 150°C.
To handle ESD protection, use an ESD wrist strap or mat, and ensure that the device is stored in an anti-static bag or container. Avoid touching the device's pins or leads during handling.
The recommended storage condition for the SUD70090E-GE3 is in a dry, cool place with a relative humidity of 60% or less, and a temperature range of 20°C to 30°C.