Part Details for SUD50P04-08-GE3 by Vishay Siliconix
Results Overview of SUD50P04-08-GE3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SUD50P04-08-GE3 Information
SUD50P04-08-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SUD50P04-08-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SUD50P04-08-GE3CT-ND
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DigiKey | MOSFET P-CH 40V 50A TO252 Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
15627 In Stock |
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$0.5400 / $1.8600 | Buy Now |
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DISTI #
70459612
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RS | MOSFET P-CH 40V 50A DPAK Min Qty: 2000 Package Multiple: 1 Container: Bulk | 0 |
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$1.5900 | RFQ |
Part Details for SUD50P04-08-GE3
SUD50P04-08-GE3 CAD Models
SUD50P04-08-GE3 Part Data Attributes
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SUD50P04-08-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SUD50P04-08-GE3
Vishay Siliconix
TRANSISTOR 50 A, 40 V, 0.0081 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-252 | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 106 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0081 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 73.5 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SUD50P04-08-GE3
This table gives cross-reference parts and alternative options found for SUD50P04-08-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUD50P04-08-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SUD50P04-15 | Vishay Intertechnologies | Check for Price | Transistor, | SUD50P04-08-GE3 vs SUD50P04-15 |
SUD50P04-08-GE3 Frequently Asked Questions (FAQ)
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The recommended land pattern for the SUD50P04-08-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay's Power MOSFETs' (document number 91000).
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To ensure reliability in high-temperature applications, it is essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow. Additionally, the device should be operated within its specified temperature range and derated accordingly.
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The SUD50P04-08-GE3 has an internal ESD protection diode, but it is still recommended to follow proper ESD handling procedures when handling the device. This includes using an ESD wrist strap or mat, and storing the device in an anti-static bag or container.
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Yes, the SUD50P04-08-GE3 can be used in high-frequency switching applications, but it is essential to consider the device's switching characteristics, such as its rise and fall times, and ensure that the device is operated within its specified frequency range.
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The suitable gate resistor value for the SUD50P04-08-GE3 depends on the specific application requirements, such as the switching frequency and the gate drive voltage. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms, but it is recommended to consult the application note 'Gate Drive Considerations for Power MOSFETs' (document number 91001) for more detailed guidance.