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Part Details for SUD20N10-66L-GE3 by Vishay Intertechnologies
Results Overview of SUD20N10-66L-GE3 by Vishay Intertechnologies
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
SUD20N10-66L-GE3 Information
SUD20N10-66L-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SUD20N10-66L-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
57AJ0777
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Newark | Mosfet, N-Ch, 100V, 16.9A, To-252 Rohs Compliant: Yes |Vishay SUD20N10-66L-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 10667 |
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$0.3720 / $1.1200 | Buy Now |
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DISTI #
01X0090
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Newark | N-Channel 100-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SUD20N10-66L-GE3 RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2870 / $0.3820 | Buy Now |
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DISTI #
SUD20N10-66L-GE3
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Avnet Americas | Power MOSFET, N Channel, 100 V, 16.9 A, 0.055 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: SUD20N10-66L-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.2553 / $0.2712 | Buy Now |
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DISTI #
78-SUD20N10-66L-GE3
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Mouser Electronics | MOSFETs N-Channel 100-V D-S RoHS: Compliant | 3073 |
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$0.2950 / $0.9600 | Buy Now |
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DISTI #
E02:0323_07051523
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Arrow Electronics | Trans MOSFET N-CH 100V 16.9A 3-Pin(2+Tab) DPAK Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks Date Code: 2439 | Europe - 2000 |
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$0.2630 / $0.2891 | Buy Now |
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DISTI #
A03:0893_05274309
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Arrow Electronics | Trans MOSFET N-CH 100V 16.9A 3-Pin(2+Tab) DPAK Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks Date Code: 2334 | Asia - 2000 |
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$0.3175 | Buy Now |
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DISTI #
82785496
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Verical | Trans MOSFET N-CH 100V 16.9A 3-Pin(2+Tab) DPAK Min Qty: 2000 Package Multiple: 2000 | Americas - 2000 |
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$0.3175 | Buy Now |
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DISTI #
86214758
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Verical | Trans MOSFET N-CH 100V 16.9A 3-Pin(2+Tab) DPAK Min Qty: 2000 Package Multiple: 2000 Date Code: 2439 | Americas - 2000 |
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$0.2644 / $0.2907 | Buy Now |
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Bristol Electronics | 840 |
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RFQ | ||
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DISTI #
SUD20N10-66L-GE3
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TTI | MOSFETs N-Channel 100-V D-S RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel | Americas - 0 |
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$0.2560 / $0.2770 | Buy Now |
Part Details for SUD20N10-66L-GE3
SUD20N10-66L-GE3 CAD Models
SUD20N10-66L-GE3 Part Data Attributes
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SUD20N10-66L-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SUD20N10-66L-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 16.9A I(D), 100V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 11.25 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 16.9 A | |
| Drain-source On Resistance-Max | 0.066 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SUD20N10-66L-GE3
This table gives cross-reference parts and alternative options found for SUD20N10-66L-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUD20N10-66L-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPD64CN10NG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 17A I(D), 100V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | SUD20N10-66L-GE3 vs IPD64CN10NG |
| SI7322DN-T1-E3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 18A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK1212-8 | SUD20N10-66L-GE3 vs SI7322DN-T1-E3 |
| IPD64CN10NGBUMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 17A I(D), 100V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | SUD20N10-66L-GE3 vs IPD64CN10NGBUMA1 |
| SI7322DN-T1-GE3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 18A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK1212-8 | SUD20N10-66L-GE3 vs SI7322DN-T1-GE3 |
SUD20N10-66L-GE3 Frequently Asked Questions (FAQ)
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The recommended land pattern for the SUD20N10-66L-GE3 can be found in the Vishay Intertechnologies' application note AN81193, which provides guidelines for PCB layout and assembly.
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To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to consider using a thermal interface material to improve heat dissipation.
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While the SUD20N10-66L-GE3 is primarily designed for low-frequency applications, it can be used in high-frequency switching applications with proper design considerations, such as minimizing parasitic inductance and ensuring proper thermal management.
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The maximum allowed voltage overshoot for the SUD20N10-66L-GE3 is 10% above the maximum rated voltage, as specified in the datasheet.
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To prevent damage, it is recommended to store the SUD20N10-66L-GE3 in its original packaging, away from direct sunlight and moisture, and to handle the device by the body rather than the leads to prevent mechanical stress.