-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for STY80NM60N by STMicroelectronics
Results Overview of STY80NM60N by STMicroelectronics
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
STY80NM60N Information
STY80NM60N by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STY80NM60N
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
70391742
|
RS | STY80NM60N N-channel MOSFET Transistor, 74 A, 600 V, 3-Pin Max247 Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
|
$12.8760 / $13.2000 | RFQ |
|
|
ComSIT USA | N-CHANNEL 600 V-0.035 OHM-80 A-MAX247 SECOND GENERATION MDMESH POWER MOSFET Power Field-Effect Transistor, 80A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
|
|
RFQ | |
|
DISTI #
STY80NM60N
|
Avnet Silica | Trans MOSFET NCH 600V 74A 3Pin3Tab Max247 Tube (Alt: STY80NM60N) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 143 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
|
DISTI #
STY80NM60N
|
EBV Elektronik | Trans MOSFET NCH 600V 74A 3Pin3Tab Max247 Tube (Alt: STY80NM60N) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
DISTI #
STY80NM60N
|
EBV Elektronik | Trans MOSFET NCH 600V 74A 3Pin3Tab Max247 Tube (Alt: STY80NM60N) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for STY80NM60N
STY80NM60N CAD Models
STY80NM60N Part Data Attributes
|
|
STY80NM60N
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STY80NM60N
STMicroelectronics
N-channel 600 V, 0.030 Ohm, 74 A, MDmesh(TM) II Power MOSFET Max247
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | ROHS COMPLIANT, MAX247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 447 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
STY80NM60N Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the STY80NM60N is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
-
To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 250W for the STY80NM60N. Additionally, ensure good airflow around the heat sink to prevent overheating.
-
The recommended gate drive voltage for the STY80NM60N is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device and ensure optimal performance.
-
To protect the STY80NM60N from overvoltage and overcurrent, it's recommended to use a voltage regulator or a DC-DC converter to regulate the input voltage. Additionally, consider using overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device. It's also essential to ensure the device is operated within its specified maximum ratings.
-
For optimal performance and reliability, it's recommended to follow good PCB design practices, such as using a multi-layer PCB with a solid ground plane, keeping the power traces short and wide, and using decoupling capacitors to reduce noise and ringing. Additionally, ensure the device is placed in a location that allows for good airflow and heat dissipation.