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Automotive-grade N-channel 650 V, 42 mOhm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STW65N65DM2AG by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
32AJ8928
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Newark | Mosfet, N-Ch, 650V, 60A, To247, Transistor Polarity:N Channel, Continuous Drain Current Id:60A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.042Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Rohs Compliant: Yes |Stmicroelectronics STW65N65DM2AG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$8.3300 / $13.7700 | Buy Now |
DISTI #
497-16127-5-ND
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DigiKey | MOSFET N-CH 650V 60A TO247 Min Qty: 1 Lead time: 16 Weeks Container: Tube |
13 In Stock |
|
$5.2125 / $11.0000 | Buy Now |
DISTI #
STW65N65DM2AG
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Avnet Americas | Trans MOSFET N-CH 650V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW65N65DM2AG) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$5.0016 / $5.2785 | Buy Now |
DISTI #
511-STW65N65DM2AG
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Mouser Electronics | MOSFETs Automotive-grade N-channel 650 V, 42 mOhm typ 60 A MDmesh DM2 Power MOSFET RoHS: Compliant | 572 |
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$5.2100 / $10.8000 | Buy Now |
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STMicroelectronics | Automotive-grade N-channel 650 V, 42 mOhm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package RoHS: Compliant Min Qty: 1 | 572 |
|
$5.3100 / $10.6300 | Buy Now |
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Future Electronics | MOSFET Automotive-grade N-channel 650 V,42 mOhm typ 60 A MDmesh DM2 Power MOSFET Min Qty: 30 Package Multiple: 30 |
330 null |
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$5.2800 / $5.4100 | Buy Now |
DISTI #
STW65N65DM2AG
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TME | Transistor: N-MOSFET, unipolar, 650V, 38A, Idm: 240A, 446W, TO247 Min Qty: 1 | 0 |
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$6.2500 / $9.5900 | RFQ |
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Chip 1 Exchange | INSTOCK | 2730 |
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RFQ | |
DISTI #
STW65N65DM2AG
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Avnet Silica | Trans MOSFET NCH 650V 60A 3Pin TO247 Tube (Alt: STW65N65DM2AG) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days | Silica - 600 |
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Buy Now | |
DISTI #
STW65N65DM2AG
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EBV Elektronik | Trans MOSFET NCH 650V 60A 3Pin TO247 Tube (Alt: STW65N65DM2AG) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
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STW65N65DM2AG
STMicroelectronics
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Datasheet
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STW65N65DM2AG
STMicroelectronics
Automotive-grade N-channel 650 V, 42 mOhm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
The maximum operating temperature range for the STW65N65DM2AG is -40°C to 150°C.
To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum ESR of 1 ohm, and to follow the recommended PCB layout guidelines.
The maximum current rating for the STW65N65DM2AG is 65A.
It is recommended to use an overvoltage protection (OVP) circuit and an undervoltage lockout (UVLO) circuit to protect the device from overvoltage and undervoltage conditions.
The recommended PCB layout for the STW65N65DM2AG includes using a solid ground plane, placing the input and output capacitors close to the device, and using short and wide traces for the power lines.