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Transistors / Power Field-Effect Transistors / STW56N60M2
Datasheets
STW56N60M2 by:

N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package

Part Details for STW56N60M2 by STMicroelectronics

Results Overview of STW56N60M2 by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

STW56N60M2 Information

STW56N60M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STW56N60M2

Part # Distributor Description Stock Price Buy
DISTI # 07AH7138
Newark Mosfet, N-Ch, 600V, 52A, To-247, Transistor Polarity:N Channel, Continuous Drain Current Id:52A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.045Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipationrohs Compliant: Yes |Stmicroelectronics STW56N60M2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 366
  • 1 $9.6400
  • 10 $9.5200
  • 25 $7.6700
  • 50 $7.4700
  • 100 $7.2600
  • 250 $7.1000
$7.1000 / $9.6400 Buy Now
DISTI # 38AH9324
Newark Stpower N-Channel Mosfets > 350 V To 700 V |Stmicroelectronics STW56N60M2 RoHS: Not Compliant Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $6.7700
$6.7700 Buy Now
DISTI # 497-15577-5-ND
DigiKey MOSFET N-CH 600V 52A TO247 Min Qty: 1 Lead time: 16 Weeks Container: Tube 351
In Stock
  • 1 $7.2200
  • 30 $4.9010
  • 120 $4.6270
  • 510 $4.3484
$4.3484 / $7.2200 Buy Now
DISTI # STW56N60M2
Avnet Americas Power MOSFET, N Channel, 600 V, 52 A, 0.045 ohm, TO-247, Through Hole - Rail/Tube (Alt: STW56N60M2) RoHS: Compliant Min Qty: 600 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Tube 600
  • 600 $4.3049
  • 610 $4.2832
  • 1,300 $4.2532
  • 3,000 $4.2315
  • 6,000 $4.2098
$4.2098 / $4.3049 Buy Now
DISTI # 511-STW56N60M2
Mouser Electronics MOSFETs N-channel 600 V, 0.045 Ohm typ 52 A MDmesh M2 Power MOSFET RoHS: Compliant 18
  • 1 $7.2200
  • 10 $6.9000
  • 25 $4.9100
  • 100 $4.6300
  • 250 $4.3500
  • 600 $4.3400
$4.3400 / $7.2200 Buy Now
STMicroelectronics N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package RoHS: Compliant Min Qty: 1 18
  • 1 $7.0800
  • 10 $6.7600
  • 25 $4.8100
  • 100 $4.5400
  • 250 $4.2600
$4.2600 / $7.0800 Buy Now
Quest Components   96
  • 1 $14.0569
  • 21 $11.5579
  • 88 $10.9331
$10.9331 / $14.0569 Buy Now
DISTI # STW56N60M2
TME Transistor: N-MOSFET, unipolar, 650V, 33A, Idm: 208A, 350W, TO247 Min Qty: 1 0
  • 1 $9.3800
  • 10 $7.8600
  • 30 $7.2700
  • 120 $6.6100
  • 510 $5.9400
  • 600 $5.8900
  • 1,020 $5.8500
$5.8500 / $9.3800 RFQ
DISTI # STW56N60M2
IBS Electronics N-CHANNEL 600 V 0.045 OHM TYP. 52 A MDMESH M2 POWER MOSFET IN A TO-247 PACKAGE Min Qty: 600 Package Multiple: 1 0
  • 90 $5.7330
  • 150 $5.6940
  • 450 $5.6030
  • 600 $5.8110
  • 750 $5.5380
$5.5380 / $5.8110 Buy Now
DISTI # STW56N60M2
Avnet Silica Power MOSFET N Channel 600 V 52 A 0045 ohm TO247 Through Hole (Alt: STW56N60M2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 1410
Buy Now
Cytech Systems Limited MOSFET N-CH 600V 52A TO247 78600
RFQ
DISTI # STW56N60M2
EBV Elektronik Power MOSFET N Channel 600 V 52 A 0045 ohm TO247 Through Hole (Alt: STW56N60M2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STW56N60M2

STW56N60M2 CAD Models

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STW56N60M2 Part Data Attributes

Parametric Data
STW56N60M2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STW56N60M2 STMicroelectronics N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Configuration SINGLE
Drain Current-Max (ID) 52 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 350 W
Surface Mount NO
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

STW56N60M2 Related Parts

STW56N60M2 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STW56N60M2 is -40°C to 150°C.

  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.

  • The recommended gate drive voltage for the STW56N60M2 is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the STW56N60M2 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a conductive container or bag.

  • The maximum allowable current for the STW56N60M2 is 56A, with a maximum pulsed current of 112A.

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