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N-channel 600 V, 0.055 Ohm typ., 44 A MDmesh(TM) II Power MOSFET in TO-247 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STW48NM60N by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-11367-5-ND
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DigiKey | MOSFET N-CH 600V 44A TO247 Min Qty: 1 Lead time: 16 Weeks Container: Tube |
513 In Stock |
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$4.5654 / $7.6600 | Buy Now |
DISTI #
STW48NM60N
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Avnet Americas | Trans MOSFET N-CH 600V 44A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW48NM60N) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$4.3480 / $4.6232 | Buy Now |
DISTI #
STW48NM60N
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Avnet Americas | Trans MOSFET N-CH 600V 44A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW48NM60N) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$4.3480 / $4.6232 | Buy Now |
DISTI #
511-STW48NM60N
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Mouser Electronics | MOSFETs N-Ch 600V 0.055 Ohm 39A Mdmesh II RoHS: Compliant | 1464 |
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$4.5600 / $7.5100 | Buy Now |
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STMicroelectronics | N-channel 600 V, 0.055 Ohm typ., 44 A MDmesh(TM) II Power MOSFET in TO-247 package RoHS: Compliant Min Qty: 1 | 1464 |
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$4.4800 / $7.3600 | Buy Now |
DISTI #
87045770
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Verical | Trans MOSFET N-CH 600V 44A 3-Pin(3+Tab) TO-247 Tube Min Qty: 6 Package Multiple: 1 | Americas - 563 |
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$4.9456 / $7.2000 | Buy Now |
DISTI #
STW48NM60N
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TME | Transistor: N-MOSFET, MDmesh™ ||, unipolar, 600V, 28A, 330W, TO247 Min Qty: 1 | 14 |
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$4.2300 / $7.8800 | Buy Now |
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ComSIT USA | 600 V, 39 A, 0.055 OHM TO-247 N-CHANNEL MDMESH II POWER MOSFET Power Field-Effect Transistor, 39A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 ECCN: EAR99 RoHS: Compliant |
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RFQ | |
DISTI #
STW48NM60N
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IBS Electronics | N-CHANNEL 600 V 0.055 OHM TYP. 44 A MDMESH(TM) II POWER MOSFET IN TO-247 PACKAGE Min Qty: 30 Package Multiple: 1 | 139800 |
|
$4.8620 / $5.1090 | Buy Now |
DISTI #
STW48NM60N
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Avnet Silica | Trans MOSFET NCH 600V 44A 3Pin3Tab TO247 Tube (Alt: STW48NM60N) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days | Silica - 1200 |
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Buy Now |
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STW48NM60N
STMicroelectronics
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Datasheet
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STW48NM60N
STMicroelectronics
N-channel 600 V, 0.055 Ohm typ., 44 A MDmesh(TM) II Power MOSFET in TO-247 package
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-247 | |
Package Description | ROHS COMPLIANT PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 457 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 39 A | |
Drain-source On Resistance-Max | 0.07 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 255 W | |
Pulsed Drain Current-Max (IDM) | 156 A | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STW48NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW48NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
STW48N60M2 | STMicroelectronics | $4.0046 | N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package | STW48NM60N vs STW48N60M2 |
The maximum operating frequency of the STW48NM60N is 100 kHz, but it can be operated at higher frequencies with reduced performance.
To ensure proper thermal management, the STW48NM60N should be mounted on a heat sink with a thermal resistance of less than 1°C/W, and the ambient temperature should be kept below 50°C.
The recommended gate drive voltage for the STW48NM60N is between 10V and 15V, with a maximum voltage of 20V.
Yes, the STW48NM60N can be used in a synchronous rectifier application, but it requires a dedicated driver and a proper PCB layout to minimize parasitic inductance.
To protect the STW48NM60N from overvoltage and overcurrent, a voltage clamp and a current sense resistor should be used, along with a protection circuit that can detect and respond to fault conditions.