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N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STW48N60M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2807328
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Farnell | MOSFET, N-CH, 600V, 42A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 18 Weeks, 1 Days Container: Each | 313 |
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$4.5788 / $6.1407 | Buy Now |
DISTI #
497-15250-5-ND
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DigiKey | MOSFET N-CH 600V 42A TO247 Min Qty: 600 Lead time: 16 Weeks Container: Tube | Temporarily Out of Stock |
|
$2.7930 | Buy Now |
DISTI #
STW48N60M2
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Avnet Americas | Trans MOSFET N-CH 650V 42A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW48N60M2) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$1.9762 / $2.1013 | Buy Now |
DISTI #
STW48N60M2
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Avnet Americas | Trans MOSFET N-CH 650V 42A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW48N60M2) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$2.0750 / $2.2161 | Buy Now |
DISTI #
511-STW48N60M2
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Mouser Electronics | MOSFETs N-channel 600 V, 60 mOhm typ 42 A MDmesh M2 Power MOSFET RoHS: Compliant | 453 |
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$3.2800 / $5.6000 | Buy Now |
DISTI #
E02:0323_08511525
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Arrow Electronics | Trans MOSFET N-CH 600V 42A 3-Pin(3+Tab) TO-247 Tube Min Qty: 600 Package Multiple: 30 Lead time: 16 Weeks Date Code: 2436 | Europe - 600 |
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$2.6791 | Buy Now |
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STMicroelectronics | N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package RoHS: Compliant Min Qty: 1 | 437 |
|
$3.2200 / $5.4900 | Buy Now |
DISTI #
85248888
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Verical | Trans MOSFET N-CH 600V 42A 3-Pin(3+Tab) TO-247 Tube Min Qty: 600 Package Multiple: 600 Date Code: 2436 | Americas - 600 |
|
$2.7020 | Buy Now |
DISTI #
83641604
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Verical | Trans MOSFET N-CH 600V 42A 3-Pin(3+Tab) TO-247 Tube Min Qty: 9 Package Multiple: 1 | Americas - 600 |
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$3.2000 / $5.5500 | Buy Now |
DISTI #
STW48N60M2
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TME | Transistor: N-MOSFET, MDmesh™ M2, unipolar, 600V, 26A, 300W, TO247 Min Qty: 1 | 29 |
|
$5.3900 / $7.2700 | Buy Now |
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STW48N60M2
STMicroelectronics
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Datasheet
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STW48N60M2
STMicroelectronics
N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 42 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Operating Temperature-Max | 150 °C | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
The maximum operating temperature range for the STW48N60M2 is -40°C to 150°C.
To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.
The recommended gate drive voltage for the STW48N60M2 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
To protect the STW48N60M2, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current-sensing resistor.
The maximum allowable power dissipation for the STW48N60M2 is 150W, but this value can be derated based on the operating temperature and other factors.