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N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO247-4 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STW48N60M2-4 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-15448-5-ND
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DigiKey | MOSFET N-CH 600V 42A TO247-4L Min Qty: 1 Lead time: 16 Weeks Container: Tube |
108 In Stock |
|
$4.0875 / $9.1400 | Buy Now |
DISTI #
STW48N60M2-4
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Avnet Americas | Trans MOSFET N-CH 650V 42A 4-Pin TO-247 Tube - Rail/Tube (Alt: STW48N60M2-4) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$3.9649 / $4.1392 | Buy Now |
DISTI #
511-STW48N60M2-4
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Mouser Electronics | MOSFETs N-channel 600 V, 60 mOhm typ 42 A MDmesh M2 Power MOSFET RoHS: Compliant | 0 |
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$4.0800 | Order Now |
DISTI #
STW48N60M2-4
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TME | Transistor: N-MOSFET, MDmesh™ M2, unipolar, 600V, 26A, 300W, ESD Min Qty: 1 | 18 |
|
$4.9300 / $6.3400 | Buy Now |
DISTI #
STW48N60M2-4
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IBS Electronics | N-CHANNEL 600 V 0.06 OHM TYP. 42 A MDMESH M2 POWER MOSFET IN TO247-4 PACKAGE Min Qty: 600 Package Multiple: 1 | 0 |
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$5.3820 / $5.6550 | Buy Now |
DISTI #
STW48N60M2-4
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Avnet Silica | Trans MOSFET NCH 650V 42A 4Pin TO247 Tube (Alt: STW48N60M2-4) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days | Silica - 540 |
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Buy Now | |
DISTI #
STW48N60M2-4
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EBV Elektronik | Trans MOSFET NCH 650V 42A 4Pin TO247 Tube (Alt: STW48N60M2-4) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
|
Vyrian | Transistors | 327 |
|
RFQ | |
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Win Source Electronics | MOSFET N-CH 600V 42A TO247-4L | 93480 |
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$1.8087 / $2.3354 | Buy Now |
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STW48N60M2-4
STMicroelectronics
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Datasheet
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Compare Parts:
STW48N60M2-4
STMicroelectronics
N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO247-4 package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 42 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Number of Elements | 1 | |
Operating Temperature-Max | 150 °C | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Surface Mount | NO | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
The maximum operating temperature of the STW48N60M2-4 is 150°C, as specified in the datasheet.
To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and consider using a thermal interface material.
The maximum current rating of the STW48N60M2-4 is 48A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.
To protect the STW48N60M2-4 from overvoltage, consider using a voltage clamp or a transient voltage suppressor (TVS) diode in parallel with the device. Additionally, ensure the device is operated within its specified voltage rating.
The recommended gate drive voltage for the STW48N60M2-4 is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.