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Transistors / Power Field-Effect Transistors / STW28N60DM2
Datasheets
STW28N60DM2 by: STMicroelectronics

N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-247 package

Part Details for STW28N60DM2 by STMicroelectronics

Results Overview of STW28N60DM2 by STMicroelectronics

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STW28N60DM2 Information

STW28N60DM2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STW28N60DM2

Part # Distributor Description Stock Price Buy
DISTI # 74Y7931
Newark Hv Mosfet Mdmesh |Stmicroelectronics STW28N60DM2 RoHS: Not Compliant Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 497-16350-5-ND
DigiKey MOSFET N-CH 600V 21A TO247 Min Qty: 1 Lead time: 16 Weeks Container: Tube 265
In Stock
  • 1 $5.0200
  • 30 $2.3410
  • 120 $2.0910
  • 510 $1.9605
  • 1,020 $1.8380
$1.8380 / $5.0200 Buy Now
DISTI # STW28N60DM2
Avnet Americas N-channel MDmesh >350 V to 700 V - Rail/Tube (Alt: STW28N60DM2) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $1.8613
  • 1,200 $1.8496
  • 2,400 $1.8153
  • 3,600 $1.7823
  • 4,800 $1.7505
$1.7505 / $1.8613 Buy Now
DISTI # 511-STW28N60DM2
Mouser Electronics MOSFETs N-channel 600 V, 0.13 Ohm typ 21 A MDmesh DM2 Power MOSFET in TO-247 package RoHS: Compliant 582
  • 1 $5.0200
  • 25 $2.4600
  • 100 $2.1300
  • 250 $1.9700
  • 600 $1.8300
$1.8300 / $5.0200 Buy Now
DISTI # E02:0323_10179650
Arrow Electronics Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247 Tube Min Qty: 600 Package Multiple: 30 Lead time: 16 Weeks Date Code: 2430 Europe - 600
  • 600 $1.8227
$1.8227 Buy Now
STMicroelectronics N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-247 package RoHS: Compliant Min Qty: 1 582
  • 1 $4.9200
  • 10 $4.9200
  • 25 $2.4100
  • 100 $2.0900
  • 250 $1.9300
$1.9300 / $4.9200 Buy Now
DISTI # 84437577
Verical Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247 Tube Min Qty: 600 Package Multiple: 600 Date Code: 2430 Americas - 600
  • 600 $1.8301
$1.8301 Buy Now
DISTI # STW28N60DM2
TME Transistor: N-MOSFET, MDmesh™ DM2, unipolar, 650V, 14A, Idm: 84A Min Qty: 1 0
  • 1 $3.3100
  • 3 $2.9900
  • 10 $2.6400
  • 30 $2.3700
$2.3700 / $3.3100 RFQ
DISTI # STW28N60DM2
Avnet Silica Nchannel MDmesh 350 V to 700 V (Alt: STW28N60DM2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 990
Buy Now
DISTI # STW28N60DM2
EBV Elektronik Nchannel MDmesh 350 V to 700 V (Alt: STW28N60DM2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 34
RFQ
Win Source Electronics MOSFET N-CH 600V 21A / Extremely low gate charge and input capacitance 1400
  • 18 $3.3807
  • 42 $2.7740
  • 65 $2.6872
  • 89 $2.6006
  • 115 $2.5139
  • 154 $2.2539
$2.2539 / $3.3807 Buy Now

Part Details for STW28N60DM2

STW28N60DM2 CAD Models

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STW28N60DM2 Part Data Attributes

Parametric Data
STW28N60DM2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STW28N60DM2 STMicroelectronics N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-247 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
JESD-609 Code e3
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Alternate Parts for STW28N60DM2

This table gives cross-reference parts and alternative options found for STW28N60DM2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW28N60DM2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
934055716127 Nexperia Check for Price Power Field-Effect Transistor STW28N60DM2 vs 934055716127
TK20V60W5 Toshiba America Electronic Components Check for Price Nch 500V<VDSS≤700V, Power MOSFET STW28N60DM2 vs TK20V60W5
SPI80N06S2L-11 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN STW28N60DM2 vs SPI80N06S2L-11
SGSP481 STMicroelectronics Check for Price 30A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STW28N60DM2 vs SGSP481
SGSP492 STMicroelectronics Check for Price 40A, 50V, 0.033ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STW28N60DM2 vs SGSP492
IRF9622 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 3A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN STW28N60DM2 vs IRF9622
MTP8P25 Motorola Mobility LLC Check for Price 8A, 250V, 2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB STW28N60DM2 vs MTP8P25
MTH35N05 Motorola Mobility LLC Check for Price 35A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC STW28N60DM2 vs MTH35N05
IRF9632 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN STW28N60DM2 vs IRF9632
2SJ117 Renesas Electronics Corporation Check for Price 2A, 400V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN STW28N60DM2 vs 2SJ117

STW28N60DM2 Related Parts

STW28N60DM2 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STW28N60DM2 is -40°C to 150°C.

  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.

  • The recommended gate drive voltage for the STW28N60DM2 is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the STW28N60DM2 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a conductive bag or container.

  • The maximum allowable current for the STW28N60DM2 is 28A, with a maximum pulsed current of 56A.

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