Part Details for STW16N65M5 by STMicroelectronics
Results Overview of STW16N65M5 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
STW16N65M5 Information
STW16N65M5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for STW16N65M5
STW16N65M5 CAD Models
STW16N65M5 Part Data Attributes
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STW16N65M5
STMicroelectronics
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Datasheet
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STW16N65M5
STMicroelectronics
12A, 650V, 0.279ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-247 | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.279 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 90 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STW16N65M5
This table gives cross-reference parts and alternative options found for STW16N65M5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW16N65M5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPW60R299CPFKSA1 | Infineon Technologies AG | $0.7055 | Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | STW16N65M5 vs IPW60R299CPFKSA1 |
| IPW65R310CFDFKSA1 | Infineon Technologies AG | $1.4093 | Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | STW16N65M5 vs IPW65R310CFDFKSA1 |
| FCP11N60N | onsemi | $1.9060 | Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220, TO-220-3, 800-TUBE | STW16N65M5 vs FCP11N60N |
| FCP260N65S3 | onsemi | $2.0700 | Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 12 A, 260 mΩ, TO-220 N-Channel SuperFET� III MOSFET, 650 V, 12 A, 260 m?, TO-220, TO-220-3, 800-TUBE | STW16N65M5 vs FCP260N65S3 |
| STU16N65M5 | STMicroelectronics | Check for Price | 12A, 650V, 0.279ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3 | STW16N65M5 vs STU16N65M5 |
| IPP60R299CP | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | STW16N65M5 vs IPP60R299CP |
| STI16N65M5 | STMicroelectronics | Check for Price | 12A, 650V, 0.279ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STW16N65M5 vs STI16N65M5 |
| FCP11N60N-F102 | onsemi | Check for Price | Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220, TO-220 3L, 800-TUBE | STW16N65M5 vs FCP11N60N-F102 |
| IPW65R310CFD | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | STW16N65M5 vs IPW65R310CFD |
| IPW60R299CPXK | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | STW16N65M5 vs IPW60R299CPXK |