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Part Details for STW11NM80 by STMicroelectronics
Results Overview of STW11NM80 by STMicroelectronics
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STW11NM80 Information
STW11NM80 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STW11NM80
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
57P2583
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Newark | Hv Mosfet Mdmesh |Stmicroelectronics STW11NM80 RoHS: Not Compliant Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
497-4420-5-ND
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DigiKey | MOSFET N-CH 800V 11A TO247-3 Min Qty: 1 Lead time: 16 Weeks Container: Tube |
62 In Stock |
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$2.6424 / $6.5800 | Buy Now |
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DISTI #
STW11NM80
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Avnet Americas | Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW11NM80) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$2.5166 / $2.6758 | Buy Now |
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DISTI #
511-STW11NM80
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Mouser Electronics | MOSFETs N-Ch 800 Volt 11 Amp Power MDmesh RoHS: Compliant | 1675 |
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$2.6400 / $6.5800 | Buy Now |
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DISTI #
E02:0323_01883356
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Arrow Electronics | Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2510 | Europe - 3270 |
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$2.2083 / $3.4851 | Buy Now |
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STMicroelectronics | N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-247 package COO: Italy RoHS: Compliant Min Qty: 1 | 1673 |
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$2.7000 / $6.4500 | Buy Now |
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DISTI #
87902859
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Verical | Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube Min Qty: 4 Package Multiple: 1 Date Code: 2510 | Americas - 3270 |
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$2.2227 / $3.5078 | Buy Now |
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Future Electronics | N-Channel 800 V 0.4 Ohm Flange Mount MDmesh Power MosFet - TO-247 Min Qty: 30 Package Multiple: 30 |
60 null |
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$1.4800 / $1.5600 | Buy Now |
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DISTI #
STW11NM80
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TME | Transistor: N-MOSFET, unipolar, 800V, 8A, 150W, TO247 Min Qty: 1 | 27 |
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$2.3500 / $4.8600 | Buy Now |
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DISTI #
STW11NM80
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IBS Electronics | N-CHANNEL 800 V 0.35 OHM 11 A MDMESH POWER MOSFET IN TO-247 Min Qty: 30 Package Multiple: 1 | 60 |
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$1.9500 / $2.0670 | Buy Now |
Part Details for STW11NM80
STW11NM80 CAD Models
STW11NM80 Part Data Attributes
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STW11NM80
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STW11NM80
STMicroelectronics
N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-247 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-247 | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 400 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STW11NM80
This table gives cross-reference parts and alternative options found for STW11NM80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW11NM80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STW11NM80 vs IPB80N06S2LH5ATMA1 |
| STD4NB25T4 | STMicroelectronics | Check for Price | 4A, 250V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | STW11NM80 vs STD4NB25T4 |
| NDB606BEL | National Semiconductor Corporation | Check for Price | TRANSISTOR 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | STW11NM80 vs NDB606BEL |
| BUK465-60A | NXP Semiconductors | Check for Price | 41A, 60V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET | STW11NM80 vs BUK465-60A |
| STD65N6F3 | STMicroelectronics | Check for Price | 65A, 60V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, DPAK-3 | STW11NM80 vs STD65N6F3 |
| FQA17N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | STW11NM80 vs FQA17N40 |
| SSS7N60B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | STW11NM80 vs SSS7N60B |
| FQP17N08L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 16.5A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STW11NM80 vs FQP17N08L |
| IXFK35N50 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 35A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN | STW11NM80 vs IXFK35N50 |
| IPP14N03LA | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 30A I(D), 25V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | STW11NM80 vs IPP14N03LA |
STW11NM80 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STW11NM80 is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.
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For optimal performance, it's recommended to follow the PCB layout guidelines provided in the datasheet, including minimizing trace lengths, using a solid ground plane, and placing decoupling capacitors close to the device.
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To handle the high current requirements, it's essential to use a suitable power supply, ensure proper PCB trace widths and thickness, and consider using a heat sink or thermal interface material to dissipate heat.
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The STW11NM80 has built-in ESD protection, but it's still essential to follow proper handling and assembly procedures to prevent damage. Additionally, latch-up prevention measures include using a latch-up immune design and following the recommended operating conditions.