Part Details for STU8N65M5 by STMicroelectronics
Results Overview of STU8N65M5 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
STU8N65M5 Information
STU8N65M5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STU8N65M5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
70391672
|
RS | STU8N65M5 N-channel MOSFET Transistor, 7 A, 650 V, 3-Pin TO-251 Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
|
$1.4900 / $2.0600 | RFQ |
Part Details for STU8N65M5
STU8N65M5 CAD Models
STU8N65M5 Part Data Attributes
|
|
STU8N65M5
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STU8N65M5
STMicroelectronics
7A, 650V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-251 | |
| Package Description | ROHS COMPLIANT, IPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 70 W | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STU8N65M5
This table gives cross-reference parts and alternative options found for STU8N65M5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STU8N65M5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STI12N65M5 | STMicroelectronics | Check for Price | 8.5A, 650V, 0.43ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STU8N65M5 vs STI12N65M5 |
| STI8N65M5 | STMicroelectronics | Check for Price | 7A, 650V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STU8N65M5 vs STI8N65M5 |
| STI18NM60N | STMicroelectronics | Check for Price | 13A, 600V, 0.285ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STU8N65M5 vs STI18NM60N |
| STI200N6F3 | STMicroelectronics | Check for Price | 120A, 60V, 0.0038ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STU8N65M5 vs STI200N6F3 |
| STI76NF75 | STMicroelectronics | Check for Price | N-channel 75 V, 0.0095 Ohm, 80 A I2PAKSTripFET II Power MOSFET | STU8N65M5 vs STI76NF75 |
| STI21N65M5 | STMicroelectronics | Check for Price | N-channel 650 V, 0.150 Ohm typ., 17 A MDmesh M5 Power MOSFET in I2PAK package | STU8N65M5 vs STI21N65M5 |
STU8N65M5 Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the STU8N65M5 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
-
To ensure proper biasing, make sure to connect the VCC pin to a stable 5V power supply, and the GND pin to a solid ground. Additionally, decouple the VCC pin with a 100nF capacitor to reduce noise and ensure stable operation.
-
For optimal EMI and noise performance, it's recommended to follow a 4-layer PCB stackup with a solid ground plane, and keep the STU8N65M5 as close as possible to the power supply. Use short, direct traces for the VCC and GND connections, and avoid routing high-frequency signals near the device.
-
Yes, the STU8N65M5 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive-grade devices and is suitable for use in harsh environments. However, ensure you follow the recommended operating conditions and design guidelines to guarantee optimal performance and reliability.
-
The STU8N65M5 has a thermal pad on the bottom of the package, which should be connected to a solid ground plane or a thermal via to dissipate heat efficiently. Ensure good thermal conductivity between the device and the PCB, and consider using a heat sink or thermal interface material if necessary.