Part Details for STU12N65M5 by STMicroelectronics
Results Overview of STU12N65M5 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STU12N65M5 Information
STU12N65M5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for STU12N65M5
STU12N65M5 CAD Models
STU12N65M5 Part Data Attributes
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STU12N65M5
STMicroelectronics
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Datasheet
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STU12N65M5
STMicroelectronics
8.5A, 650V, 0.43ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-251 | |
Package Description | ROHS COMPLIANT, IPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 8.5 A | |
Drain-source On Resistance-Max | 0.43 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251 | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 70 W | |
Pulsed Drain Current-Max (IDM) | 34 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for STU12N65M5
This table gives cross-reference parts and alternative options found for STU12N65M5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STU12N65M5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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STU5N95K3 | STMicroelectronics | $0.7887 | N-channel 950 V, 3 Ohm, 4 A Zener-protected SuperMESH3(TM) Power MOSFET in IPAK package | STU12N65M5 vs STU5N95K3 |
STP11N65M5 | STMicroelectronics | $1.3928 | N-channel 650 V, 0.43 Ohm typ., 9 A MDmesh M5 Power MOSFET in TO-220 package | STU12N65M5 vs STP11N65M5 |
STI200N6F3 | STMicroelectronics | Check for Price | 120A, 60V, 0.0038ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STU12N65M5 vs STI200N6F3 |
STU8N65M5 | STMicroelectronics | Check for Price | 7A, 650V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3 | STU12N65M5 vs STU8N65M5 |
STI12N65M5 | STMicroelectronics | Check for Price | 8.5A, 650V, 0.43ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STU12N65M5 vs STI12N65M5 |
STI76NF75 | STMicroelectronics | Check for Price | N-channel 75 V, 0.0095 Ohm, 80 A I2PAKSTripFET II Power MOSFET | STU12N65M5 vs STI76NF75 |