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Part Details for STU12N60M2 by STMicroelectronics
Results Overview of STU12N60M2 by STMicroelectronics
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
STU12N60M2 Information
STU12N60M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STU12N60M2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-16024-5-ND
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DigiKey | MOSFET N-CH 600V 9A IPAK Min Qty: 3000 Lead time: 52 Weeks Container: Tube | Temporarily Out of Stock |
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$0.6967 | Buy Now |
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DISTI #
STU12N60M2
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Avnet Americas | Trans MOSFET N-CH 600V 9A 3-Pin IPAK Tube - Rail/Tube (Alt: STU12N60M2) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
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STMicroelectronics | N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in IPAK package RoHS: Compliant Min Qty: 1 | 2951 |
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$0.6700 / $1.6000 | Buy Now |
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Future Electronics | N-Channel 600 V 450 mOhm Through Hole MDmesh M2 Power Mosfet - IPAK RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 3000Tube |
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$0.6000 / $0.6850 | Buy Now |
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Future Electronics | N-Channel 600 V 450 mOhm Through Hole MDmesh M2 Power Mosfet - IPAK Min Qty: 1 Package Multiple: 1 |
3000 null |
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$0.6000 / $0.6850 | Buy Now |
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DISTI #
STU12N60M2
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EBV Elektronik | Trans MOSFET NCH 600V 9A 3Pin IPAK Tube (Alt: STU12N60M2) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 53 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 2820 |
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RFQ |
Part Details for STU12N60M2
STU12N60M2 CAD Models
STU12N60M2 Part Data Attributes
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STU12N60M2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STU12N60M2
STMicroelectronics
N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in IPAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
STU12N60M2 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STU12N60M2 is -40°C to 150°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 0V and 600V.
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The recommended gate resistor value for the STU12N60M2 is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
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Yes, the STU12N60M2 is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
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To protect the STU12N60M2 from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent.