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N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a TO-220 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP9NK90Z by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-2785-5-ND
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DigiKey | MOSFET N-CH 900V 8A TO220AB Min Qty: 1 Lead time: 13 Weeks Container: Tube |
978 In Stock |
|
$1.8362 / $2.8900 | Buy Now |
DISTI #
STP9NK90Z
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Avnet Americas | Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP9NK90Z) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube | 0 |
|
$1.5189 / $1.6151 | Buy Now |
DISTI #
511-STP9NK90Z
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Mouser Electronics | MOSFETs N-Ch 900 Volt 8.0 A Zener SuperMESH RoHS: Compliant | 2082 |
|
$1.8300 / $2.4400 | Buy Now |
DISTI #
V36:1790_06564950
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Arrow Electronics | Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks Date Code: 2435 | Americas - 2000 |
|
$1.6240 | Buy Now |
DISTI #
E02:0323_00209873
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Arrow Electronics | Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2443 | Europe - 955 |
|
$2.0760 / $2.7681 | Buy Now |
DISTI #
E54:1762_12519483
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Arrow Electronics | Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2443 | Europe - 800 |
|
$1.8263 / $2.4351 | Buy Now |
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STMicroelectronics | N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a TO-220 package RoHS: Compliant Min Qty: 1 | 2070 |
|
$1.8000 / $2.1600 | Buy Now |
|
Future Electronics | STP9NK90Z: 900 V 1.3Ohm 8 A N-Channel Zener-Protected SuperMESH™ Power Mosfet RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Container: Box | 7Box |
|
$1.7700 / $1.8900 | Buy Now |
|
Future Electronics | STP9NK90Z: 900 V 1.3Ohm 8 A N-Channel Zener-Protected SuperMESH™ Power Mosfet RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks Container: Box | 0Box |
|
$1.7700 / $1.7900 | Buy Now |
DISTI #
86942295
|
Verical | Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 Date Code: 2435 | Americas - 2000 |
|
$1.6240 | Buy Now |
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STP9NK90Z
STMicroelectronics
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Datasheet
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STP9NK90Z
STMicroelectronics
N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a TO-220 package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 220 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 900 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 1.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 160 W | |
Pulsed Drain Current-Max (IDM) | 32 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STP9NK90Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP9NK90Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
STP4NK60Z | STMicroelectronics | $0.7578 | N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package | STP9NK90Z vs STP4NK60Z |
STP14NK50Z | STMicroelectronics | $1.0033 | N-Channel 500V - 0.34 Ohm - 14A Zener-Protected SuperMesh(TM) POWER MOSFET | STP9NK90Z vs STP14NK50Z |
NDB706AL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STP9NK90Z vs NDB706AL |
IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STP9NK90Z vs IPB80N06S2LH5ATMA1 |
IPD90N06S306ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN | STP9NK90Z vs IPD90N06S306ATMA1 |
SSP10N60B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STP9NK90Z vs SSP10N60B |
PHB65N06LT | NXP Semiconductors | Check for Price | 63A, 55V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, 3 PIN | STP9NK90Z vs PHB65N06LT |
NDD506A | National Semiconductor Corporation | Check for Price | TRANSISTOR 19 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, FET General Purpose Power | STP9NK90Z vs NDD506A |
BUK762R0-40C | Nexperia | Check for Price | Power Field-Effect Transistor | STP9NK90Z vs BUK762R0-40C |
STD17N06L-1 | STMicroelectronics | Check for Price | 17A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, IPAK-3 | STP9NK90Z vs STD17N06L-1 |
The maximum operating temperature range for the STP9NK90Z is -40°C to 150°C.
To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a suitable thermal interface material, and ensuring good airflow around the device.
The recommended gate drive voltage for the STP9NK90Z is between 10V and 15V, with a maximum gate-source voltage of ±20V.
To protect the STP9NK90Z from ESD, handle the device by the body or use an anti-static wrist strap, and ensure that the device is stored in an anti-static bag or container.
The maximum allowable power dissipation for the STP9NK90Z is 90W, but this can be increased with proper heat sinking and thermal management.