Part Details for STP6NB80FP by STMicroelectronics
Results Overview of STP6NB80FP by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
STP6NB80FP Information
STP6NB80FP by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP6NB80FP
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 7 |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ |
Part Details for STP6NB80FP
STP6NB80FP CAD Models
STP6NB80FP Part Data Attributes
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STP6NB80FP
STMicroelectronics
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Datasheet
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STP6NB80FP
STMicroelectronics
5.7A, 800V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FP, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220FP | |
| Package Description | TO-220FP, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 314 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 5.7 A | |
| Drain-source On Resistance-Max | 1.9 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 22.8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP6NB80FP
This table gives cross-reference parts and alternative options found for STP6NB80FP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP6NB80FP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SSP1N60A | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STP6NB80FP vs SSP1N60A |
| RFP30P06 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP6NB80FP vs RFP30P06 |
| STP3NA60FI | STMicroelectronics | Check for Price | 2.1A, 600V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, ISOWATT220, 3 PIN | STP6NB80FP vs STP3NA60FI |
| RFP30P05 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP6NB80FP vs RFP30P05 |
| RFP4N06L | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 4A I(D), 60V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP6NB80FP vs RFP4N06L |
| RFP2N20 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 2A I(D), 200V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP6NB80FP vs RFP2N20 |
| RFG50N06 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | STP6NB80FP vs RFG50N06 |
| RFP45N06 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP6NB80FP vs RFP45N06 |
| RFG50N06 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | STP6NB80FP vs RFG50N06 |
| RFP50N06 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP6NB80FP vs RFP50N06 |
STP6NB80FP Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the STP6NB80FP is not explicitly stated in the datasheet. However, according to STMicroelectronics' application notes, the device can operate safely within the boundaries defined by the maximum ratings, thermal resistance, and power dissipation. It's recommended to consult with STMicroelectronics' support or a qualified engineer to determine the specific SOA for your application.
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To calculate the junction temperature (Tj) of the STP6NB80FP, you can use the following formula: Tj = Tc + (Rthjc * Pd), where Tc is the case temperature, Rthjc is the thermal resistance from junction to case, and Pd is the power dissipation. The thermal resistance values can be found in the datasheet. Ensure accurate temperature measurements and consider thermal management strategies to maintain a safe operating temperature.
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For optimal thermal performance and reliability, it's recommended to follow STMicroelectronics' guidelines for PCB layout and thermal management. This includes using a thermal pad, thermal vias, and a heat sink (if necessary). Ensure a low-thermal-resistance path from the device to the heat sink or ambient air. Consult the datasheet and application notes for specific recommendations and examples.
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The STP6NB80FP is an industrial-grade device, but it may not meet the specific requirements for high-reliability or automotive applications. STMicroelectronics offers other devices with enhanced reliability and quality features, such as the AEC-Q101 qualified STP6NB80FPA. Consult with STMicroelectronics' support or a qualified engineer to determine the suitability of the STP6NB80FP for your specific application.
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The STP6NB80FP has built-in ESD protection, but it's still essential to follow proper handling and storage procedures to prevent ESD damage. Use ESD-safe materials, tools, and equipment, and ensure that your PCB design and manufacturing process incorporate ESD protection measures. Consult the datasheet and STMicroelectronics' application notes for specific guidelines.