Part Details for STP5NB40 by STMicroelectronics
Results Overview of STP5NB40 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
STP5NB40 Information
STP5NB40 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for STP5NB40
STP5NB40 CAD Models
STP5NB40 Part Data Attributes
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STP5NB40
STMicroelectronics
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Datasheet
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STP5NB40
STMicroelectronics
4.7A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 4.7 A | |
| Drain-source On Resistance-Max | 1.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 80 W | |
| Pulsed Drain Current-Max (IDM) | 19 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP5NB40
This table gives cross-reference parts and alternative options found for STP5NB40. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP5NB40, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| BUZ76 | New Jersey Semiconductor Products Inc | Check for Price | Trans MOSFET N-CH 400V 3A 3-Pin(3+Tab) TO-220AB | STP5NB40 vs BUZ76 |
| IRF723 | National Semiconductor Corporation | Check for Price | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,2.8A I(D),TO-220AB | STP5NB40 vs IRF723 |
| IRF723 | FCI Semiconductor | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | STP5NB40 vs IRF723 |
| IRF722 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | STP5NB40 vs IRF722 |
| BUZ76 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 2.6A, 400V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET | STP5NB40 vs BUZ76 |
| MTP2N35 | Semiconductor Technology Inc | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | STP5NB40 vs MTP2N35 |
| IRF723-001 | International Rectifier | Check for Price | Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP5NB40 vs IRF723-001 |
| IRF723 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP5NB40 vs IRF723 |
STP5NB40 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STP5NB40 is -40°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, minimizing thermal resistance, and avoiding thermal hotspots.
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To minimize EMI, it's recommended to use a multi-layer PCB with a solid ground plane, keep the device away from noise sources, and use shielding or filtering if necessary.
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Yes, the STP5NB40 is designed to handle high-voltage applications up to 400V. However, it's essential to follow proper design and layout guidelines to ensure safe and reliable operation.
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To protect the device, it's recommended to use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, such as zener diodes, TVS diodes, or fuses, depending on the specific application requirements.