-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in TO-220 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP3NK60Z by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
497-7525-5-ND
|
DigiKey | MOSFET N-CH 600V 2.4A TO220AB Min Qty: 1 Lead time: 13 Weeks Container: Tube |
4867 In Stock |
|
$0.6352 / $1.7100 | Buy Now |
DISTI #
STP3NK60Z
|
Avnet Americas | Trans MOSFET N-CH 600V 2.4A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP3NK60Z) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube | 0 |
|
$0.6050 / $0.6433 | Buy Now |
DISTI #
511-STP3NK60Z
|
Mouser Electronics | MOSFETs N-Ch 600 Volt 2.4 A Zener SuperMESH RoHS: Compliant | 1803 |
|
$0.6350 / $1.6800 | Buy Now |
DISTI #
V36:1790_06564723
|
Arrow Electronics | Trans MOSFET N-CH 600V 2.4A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks Date Code: 2221 | Americas - 3930 |
|
$0.5774 / $0.5995 | Buy Now |
|
STMicroelectronics | N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in TO-220 package COO: Singapore RoHS: Compliant Min Qty: 1 | 1803 |
|
$0.6500 / $1.6500 | Buy Now |
DISTI #
69220969
|
Verical | Trans MOSFET N-CH 600V 2.4A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 Date Code: 2221 | Americas - 3000 |
|
$0.6337 | Buy Now |
|
Bristol Electronics | 1588 |
|
RFQ | ||
DISTI #
STP3NK60Z
|
TME | Transistor: N-MOSFET, unipolar, 600V, 1.51A, 45W, TO220-3, ESD Min Qty: 1 | 81 |
|
$0.3940 / $1.0460 | Buy Now |
|
ComSIT USA | N-CHANNEL 600 V-3.3 OHM-2.4 A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ECCN: EAR99 RoHS: Compliant |
|
|
RFQ | |
DISTI #
STP3NK60Z
|
IBS Electronics | N-CHANNEL 600V - 3.3 OHM - 2.4A TO-220FP ZENER-PROTECTED SUPERMESH™, POWERMOSFET Min Qty: 50 Package Multiple: 1 | 50 |
|
$0.5915 / $0.6565 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
STP3NK60Z
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STP3NK60Z
STMicroelectronics
N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in TO-220 package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Date Of Intro | 1980-01-04 | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 2.4 A | |
Drain-source On Resistance-Max | 3.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 45 W | |
Pulsed Drain Current-Max (IDM) | 9.6 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STP3NK60Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP3NK60Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
STD3NK60Z-1 | STMicroelectronics | $0.3092 | N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in IPAK package | STP3NK60Z vs STD3NK60Z-1 |
FQD3N60CTM-WS | onsemi | $0.5191 | Power MOSFET, N-Channel, QFET®, 600 V, 2.4 A, 3.4 Ω, DPAK, TO-252 3L (DPAK), 2500-REEL | STP3NK60Z vs FQD3N60CTM-WS |
STD3NK60ZT4 | STMicroelectronics | $0.8192 | N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in DPAK package | STP3NK60Z vs STD3NK60ZT4 |
STI11NM65N | STMicroelectronics | Check for Price | 12A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, I2PAK-3 | STP3NK60Z vs STI11NM65N |
The maximum operating temperature range for the STP3NK60Z is -40°C to 150°C.
To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 10V and 600V.
The recommended gate resistor value for the STP3NK60Z is between 10Ω and 100Ω, depending on the specific application and switching frequency.
To protect the STP3NK60Z from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent.
The maximum allowable power dissipation for the STP3NK60Z is 150W, but this can be increased with proper heat sinking and thermal management.