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Part Details for STP36N55M5 by STMicroelectronics
Results Overview of STP36N55M5 by STMicroelectronics
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STP36N55M5 Information
STP36N55M5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP36N55M5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
45AC7719
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Newark | Mosfet, N-Ch, 550V, 33A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:550V, Continuous Drain Current Id:33A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STP36N55M5 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 189 |
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$3.0100 / $3.2800 | Buy Now |
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DISTI #
V79:2366_17793300
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Arrow Electronics | Trans MOSFET N-CH Si 550V 33A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 1620 | Americas - 5614 |
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$3.5470 | Buy Now |
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DISTI #
V36:1790_06564707
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Arrow Electronics | Trans MOSFET N-CH Si 550V 33A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 Lead time: 99 Weeks Date Code: 1620 | Americas - 40 |
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$2.1880 | Buy Now |
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DISTI #
70521394
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RS | STP36N55M5 N-channel MOSFET Transistor, 33 A, 600 V, 3-Pin TO-220 Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
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$3.0200 / $4.5600 | RFQ |
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DISTI #
26709563
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Verical | Trans MOSFET N-CH Si 550V 33A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 2 Package Multiple: 1 Date Code: 1620 | Americas - 5614 |
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$3.5470 | Buy Now |
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DISTI #
36508814
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Verical | Trans MOSFET N-CH Si 550V 33A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 16 Package Multiple: 1 | Americas - 189 |
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$4.5937 / $5.1654 | Buy Now |
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DISTI #
25667717
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Verical | Trans MOSFET N-CH Si 550V 33A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 40 Package Multiple: 40 Date Code: 1620 | Americas - 40 |
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$2.1880 | Buy Now |
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DISTI #
STP36N55M5
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Avnet Silica | Trans MOSFET NCH 550V 33A 3Pin3Tab TO220 Tube (Alt: STP36N55M5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
STP36N55M5
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EBV Elektronik | Trans MOSFET NCH 550V 33A 3Pin3Tab TO220 Tube (Alt: STP36N55M5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STP36N55M5
STP36N55M5 CAD Models
STP36N55M5 Part Data Attributes
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STP36N55M5
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP36N55M5
STMicroelectronics
N-channel 550 V, 0.06 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-220 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 550 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 190 W | |
| Pulsed Drain Current-Max (IDM) | 132 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP36N55M5
This table gives cross-reference parts and alternative options found for STP36N55M5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP36N55M5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPT60R080G7 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, | STP36N55M5 vs IPT60R080G7 |
| TK31E60W | Toshiba America Electronic Components | Check for Price | Nch 500V<VDSS≤700V | STP36N55M5 vs TK31E60W |
| TK31E60X | Toshiba America Electronic Components | Check for Price | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V | STP36N55M5 vs TK31E60X |
STP36N55M5 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STP36N55M5 is -40°C to 150°C.
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To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum ESR of 1 ohm.
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The maximum current rating for the STP36N55M5 is 55A.
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It is recommended to use an overvoltage protection (OVP) circuit and an undervoltage lockout (UVLO) circuit to protect the STP36N55M5 from overvoltage and undervoltage conditions.
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It is recommended to use a 2-layer or 4-layer PCB with a solid ground plane and to keep the high-current paths as short as possible to minimize power losses and electromagnetic interference (EMI).