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N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STripFET II MOSFET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP30NF10 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26M3688
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Newark | Mosfet, N, To-220, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:35A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Power Dissipation:115W Rohs Compliant: Yes |Stmicroelectronics STP30NF10 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 324 |
|
$0.4920 / $1.6800 | Buy Now |
DISTI #
82AC0155
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Newark | Ptd Low Voltage Rohs Compliant: Yes |Stmicroelectronics STP30NF10 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.8970 | Buy Now |
DISTI #
497-7520-5-ND
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DigiKey | MOSFET N-CH 100V 35A TO220AB Min Qty: 1 Lead time: 13 Weeks Container: Tube |
372 In Stock |
|
$0.8538 / $0.9500 | Buy Now |
DISTI #
STP30NF10
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Avnet Americas | Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP30NF10) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube | 0 |
|
$0.3964 / $0.4215 | Buy Now |
DISTI #
511-STP30NF10
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Mouser Electronics | MOSFETs N-Ch 100 Volt 35 Amp RoHS: Compliant | 2009 |
|
$0.8530 / $0.9300 | Buy Now |
DISTI #
V79:2366_17778421
|
Arrow Electronics | Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 2145 | Americas - 32536 |
|
$0.6827 | Buy Now |
DISTI #
E02:0323_00212239
|
Arrow Electronics | Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2505 | Europe - 17971 |
|
$0.6298 / $0.9303 | Buy Now |
DISTI #
V36:1790_06564684
|
Arrow Electronics | Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks Date Code: 2402 | Americas - 5000 |
|
$0.7172 | Buy Now |
|
STMicroelectronics | N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STripFET II MOSFET RoHS: Compliant Min Qty: 1 | 2009 |
|
$0.8600 / $0.9100 | Buy Now |
DISTI #
65134188
|
Verical | Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 9 Package Multiple: 1 Date Code: 2145 | Americas - 32536 |
|
$0.6827 | Buy Now |
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STP30NF10
STMicroelectronics
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Datasheet
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STP30NF10
STMicroelectronics
N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STripFET II MOSFET
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 275 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 35 A | |
Drain-source On Resistance-Max | 0.045 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 115 W | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STP30NF10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP30NF10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
NDP706A | National Semiconductor Corporation | Check for Price | TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | STP30NF10 vs NDP706A |
IRFS620 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STP30NF10 vs IRFS620 |
FQA17N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | STP30NF10 vs FQA17N40 |
STD65N6F3 | STMicroelectronics | Check for Price | 65A, 60V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, DPAK-3 | STP30NF10 vs STD65N6F3 |
FDP6035L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STP30NF10 vs FDP6035L |
BUK465-60A | NXP Semiconductors | Check for Price | 41A, 60V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET | STP30NF10 vs BUK465-60A |
FQAF7N80 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | STP30NF10 vs FQAF7N80 |
FQB13N50 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 12.5A I(D), 500V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | STP30NF10 vs FQB13N50 |
FDP6644 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 50A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STP30NF10 vs FDP6644 |
IPB05N03L | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | STP30NF10 vs IPB05N03L |
The maximum operating temperature range for the STP30NF10 is -55°C to 150°C.
To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is Vgs = 10V, Vds = 10V, and Id = 10A.
The maximum current rating for the STP30NF10 is 30A.
To protect the STP30NF10 from overvoltage and overcurrent, use a voltage regulator to limit the voltage, and add a current sense resistor and a fuse to detect and interrupt excessive current.
The thermal resistance of the STP30NF10 is Rth(j-a) = 40°C/W and Rth(j-c) = 10°C/W.