-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in a TO-220 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP2NK90Z by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
38K7922
|
Newark | Mosfet Transistor, N Channel, 2.1 A, 900 V, 6.5 Ohm, 10 V, 3.75 V Rohs Compliant: Yes |Stmicroelectronics STP2NK90Z RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 618 |
|
$0.8470 / $2.1000 | Buy Now |
DISTI #
497-4378-5-ND
|
DigiKey | MOSFET N-CH 900V 2.1A TO220AB Min Qty: 1 Lead time: 13 Weeks Container: Tube |
357 In Stock |
|
$0.7837 / $2.2600 | Buy Now |
DISTI #
STP2NK90Z
|
Avnet Americas | Trans MOSFET N-CH 900V 2.1A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP2NK90Z) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube | 0 |
|
$0.5380 / $0.5720 | Buy Now |
DISTI #
511-STP2NK90Z
|
Mouser Electronics | MOSFETs N-Ch 900 Volt 2.1Amp Zener SuperMESH RoHS: Compliant | 940 |
|
$0.7830 / $2.1800 | Buy Now |
DISTI #
E02:0323_00212233
|
Arrow Electronics | Trans MOSFET N-CH 900V 2.1A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2444 | Europe - 26637 |
|
$0.6549 / $1.2077 | Buy Now |
DISTI #
V36:1790_06564679
|
Arrow Electronics | Trans MOSFET N-CH 900V 2.1A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks Date Code: 2435 | Americas - 6000 |
|
$0.6419 / $0.7996 | Buy Now |
|
STMicroelectronics | N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in a TO-220 package COO: Singapore RoHS: Compliant Min Qty: 1 | 940 |
|
$1.0200 / $2.1300 | Buy Now |
DISTI #
87899012
|
Verical | Trans MOSFET N-CH 900V 2.1A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 16 Package Multiple: 1 Date Code: 2444 | Americas - 26624 |
|
$0.6429 / $1.1860 | Buy Now |
DISTI #
86942281
|
Verical | Trans MOSFET N-CH 900V 2.1A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 Date Code: 2435 | Americas - 6000 |
|
$0.6419 / $0.7996 | Buy Now |
|
Bristol Electronics | 92 |
|
RFQ |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
STP2NK90Z
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STP2NK90Z
STMicroelectronics
N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in a TO-220 package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 900 V | |
Drain Current-Max (ID) | 2.1 A | |
Drain-source On Resistance-Max | 6.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 70 W | |
Pulsed Drain Current-Max (IDM) | 8.4 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STP2NK90Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP2NK90Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STP2NK90Z vs IPB80N06S2LH5ATMA1 |
NDB606BEL | National Semiconductor Corporation | Check for Price | TRANSISTOR 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | STP2NK90Z vs NDB606BEL |
2SK3581-01L | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 16A I(D), 500V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | STP2NK90Z vs 2SK3581-01L |
NP82N055NUG-S18-AY | Renesas Electronics Corporation | Check for Price | Power MOSFETs for Automotive, MP-25SK, /Tube | STP2NK90Z vs NP82N055NUG-S18-AY |
IRFS650B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | STP2NK90Z vs IRFS650B |
PHB145NQ06T | NXP Semiconductors | Check for Price | 75A, 55V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 | STP2NK90Z vs PHB145NQ06T |
NDB705AEL | Texas Instruments | Check for Price | 75A, 50V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STP2NK90Z vs NDB705AEL |
NDU406AL | Texas Instruments | Check for Price | 15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 | STP2NK90Z vs NDU406AL |
NDU406A | National Semiconductor Corporation | Check for Price | TRANSISTOR 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, FET General Purpose Power | STP2NK90Z vs NDU406A |
NDP505AE | National Semiconductor Corporation | Check for Price | TRANSISTOR 26 A, 50 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power | STP2NK90Z vs NDP505AE |
The maximum operating frequency of the STP2NK90Z is 100 kHz, but it can be used up to 200 kHz with some limitations.
To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 10V and 900V. Additionally, the gate current (Ig) should be limited to 100mA.
The maximum power dissipation of the STP2NK90Z is 150W, but it can be increased to 200W with a proper heat sink and thermal management.
To protect the STP2NK90Z from overvoltage and overcurrent, use a voltage regulator or a zener diode to limit the voltage, and a current limiter or a fuse to limit the current.
The recommended gate resistor value for the STP2NK90Z is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.