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Part Details for STP15N65M5 by STMicroelectronics
Results Overview of STP15N65M5 by STMicroelectronics
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP15N65M5 Information
STP15N65M5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP15N65M5
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-12936-5-ND
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DigiKey | MOSFET N CH 650V 11A TO220 Min Qty: 1 Lead time: 14 Weeks Container: Tube |
979 In Stock |
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$0.9748 / $3.1400 | Buy Now |
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DISTI #
STP15N65M5
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Avnet Americas | Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP15N65M5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tube | 0 |
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$0.9006 / $0.9576 | Buy Now |
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DISTI #
511-STP15N65M5
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Mouser Electronics | MOSFETs N-Ch 650V .0308 Ohm 11A MDmesh V MOS RoHS: Compliant | 0 |
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$0.9740 / $2.9600 | Order Now |
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DISTI #
70521419
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RS | STP15N65M5 N-channel MOSFET Transistor, 11 A, 710 V, 3-Pin TO-220 Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$1.8600 / $2.1800 | RFQ |
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STMicroelectronics | N-channel 650 V, 0.308 Ohm typ., 11 A MDmesh M5 Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 | 0 |
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$1.1300 / $3.0300 | Buy Now |
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Future Electronics | 650 V 0.308 Ohm typ., 11 A N-Channel MDmesh™ V Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks Container: Tube | 3698Tube |
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$1.0200 / $1.0900 | Buy Now |
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Future Electronics | 650 V 0.308 Ohm typ., 11 A N-Channel MDmesh™ V Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 14 Weeks Container: Tube | 0Tube |
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$1.0200 / $1.0900 | Buy Now |
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Bristol Electronics | 164 |
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RFQ | ||
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Quest Components | 131 |
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$2.2200 / $3.6000 | Buy Now | |
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Future Electronics | 650 V 0.308 Ohm typ., 11 A N-Channel MDmesh� V Power Mosfet - TO-220-3 Min Qty: 1 Package Multiple: 1 |
3698 null |
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$1.0200 / $1.0900 | Buy Now |
Part Details for STP15N65M5
STP15N65M5 CAD Models
STP15N65M5 Part Data Attributes
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STP15N65M5
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP15N65M5
STMicroelectronics
N-channel 650 V, 0.308 Ohm typ., 11 A MDmesh M5 Power MOSFET in TO-220 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | TO-220, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 160 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.34 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP15N65M5
This table gives cross-reference parts and alternative options found for STP15N65M5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP15N65M5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPD65R380C6BTMA1 | Infineon Technologies AG | $0.7409 | Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, PLASTIC PACKAGE-3 | STP15N65M5 vs IPD65R380C6BTMA1 |
| IPD65R380E6BTMA1 | Infineon Technologies AG | $0.7409 | Power Field-Effect Transistor, 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC PACKAGE-3 | STP15N65M5 vs IPD65R380E6BTMA1 |
| IPD65R380E6ATMA1 | Infineon Technologies AG | $1.2658 | Power Field-Effect Transistor, 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC PACKAGE-3 | STP15N65M5 vs IPD65R380E6ATMA1 |
| IPD65R225C7ATMA1 | Infineon Technologies AG | $1.2880 | Power Field-Effect Transistor, 11A I(D), 650V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3/2 | STP15N65M5 vs IPD65R225C7ATMA1 |
| IPD65R380E6 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC PACKAGE-3 | STP15N65M5 vs IPD65R380E6 |
| IPD65R380C6ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | STP15N65M5 vs IPD65R380C6ATMA1 |
| IPP65R225C7 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 650V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | STP15N65M5 vs IPP65R225C7 |
STP15N65M5 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STP15N65M5 is -40°C to 150°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 0V and 650V.
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The recommended gate resistor value for the STP15N65M5 is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
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Yes, the STP15N65M5 is suitable for high-frequency switching applications up to 1MHz, but the user should ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
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To protect the STP15N65M5 from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent.