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N-channel 60 V, 0.0031 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP140N6F7 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
45AC7693
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Newark | Mosfet, N-Ch, 60V, 80A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:80A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Qualification:- Rohs Compliant: Yes |Stmicroelectronics STP140N6F7 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1769 |
|
$1.5400 / $2.8700 | Buy Now |
DISTI #
497-15890-5-ND
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DigiKey | MOSFET N-CH 60V 80A TO220 Min Qty: 1 Lead time: 26 Weeks Container: Tube |
970 In Stock |
|
$0.8996 / $2.4200 | Buy Now |
DISTI #
STP140N6F7
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Avnet Americas | Power MOSFET, N Channel, 60 V, 80 A, 0.0031 ohm, TO-220AB, Through Hole - Rail/Tube (Alt: STP140N6F7) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Tube | 0 |
|
$0.8559 / $0.9101 | Buy Now |
DISTI #
511-STP140N6F7
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Mouser Electronics | MOSFETs N-channel 60 V, 0.0031 Ohm typ 80 A STripFET F7 Power MOSFET in TO-220 package RoHS: Compliant | 7696 |
|
$0.9620 / $2.4100 | Buy Now |
DISTI #
E02:0323_09045959
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Arrow Electronics | Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Date Code: 2435 | Europe - 800 |
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$0.9481 / $1.0324 | Buy Now |
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STMicroelectronics | N-channel 60 V, 0.0031 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 | 7690 |
|
$0.9400 / $2.3600 | Buy Now |
DISTI #
85248851
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Verical | Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 6 Package Multiple: 1 Date Code: 2435 | Americas - 798 |
|
$0.9520 / $1.0366 | Buy Now |
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Future Electronics | N-Channel 60 V 80 A 0.0035 Ohm Flange Mount STripFET� F7 Power Mosfet - TO-220 Min Qty: 50 Package Multiple: 50 |
1400 null |
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$0.9350 / $1.0400 | Buy Now |
DISTI #
STP140N6F7
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TME | Transistor: N-MOSFET, STripFET™, unipolar, 60V, 80A, Idm: 320A, 158W Min Qty: 1 | 85 |
|
$1.2800 / $2.0500 | Buy Now |
DISTI #
STP140N6F7
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Avnet Silica | Power MOSFET N Channel 60 V 80 A 00031 ohm TO220AB Through Hole (Alt: STP140N6F7) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days | Silica - 5350 |
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Buy Now |
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STP140N6F7
STMicroelectronics
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Datasheet
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STP140N6F7
STMicroelectronics
N-channel 60 V, 0.0031 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220 package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | TO-220, 3 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 26 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 160 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.0035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 193 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 158 W | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature range for the STP140N6F7 is -40°C to 150°C.
To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, minimizing thermal resistance, and avoiding thermal hotspots.
The recommended gate drive voltage for the STP140N6F7 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
To protect the STP140N6F7 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a conductive container or bag.
The maximum allowed current for the STP140N6F7 is 140A, with a maximum pulsed current of 280A.