Part Details for STP11NM60N by STMicroelectronics
Results Overview of STP11NM60N by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
STP11NM60N Information
STP11NM60N by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP11NM60N
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 18 |
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Part Details for STP11NM60N
STP11NM60N CAD Models
STP11NM60N Part Data Attributes
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STP11NM60N
STMicroelectronics
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Datasheet
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STP11NM60N
STMicroelectronics
10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.45 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 100 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP11NM60N
This table gives cross-reference parts and alternative options found for STP11NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP11NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP10NM60N | STMicroelectronics | $1.3629 | N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in TO-220 package | STP11NM60N vs STP10NM60N |
| STP12NK60Z | STMicroelectronics | Check for Price | 10A, 600V, 0.64ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STP11NM60N vs STP12NK60Z |
| STP8NM60N | STMicroelectronics | Check for Price | 7A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STP11NM60N vs STP8NM60N |
| IRFSL4127PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 72A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN | STP11NM60N vs IRFSL4127PBF |
| STP6N120K3 | STMicroelectronics | Check for Price | N-channel 1200 V, 1.95 Ohm, 6 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220 package | STP11NM60N vs STP6N120K3 |
| STP10N62K3 | STMicroelectronics | Check for Price | 8.4A, 620V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STP11NM60N vs STP10N62K3 |
| STP11NM50N | STMicroelectronics | Check for Price | 9A, 500V, 0.47ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STP11NM60N vs STP11NM50N |
| STP5N52K3 | STMicroelectronics | Check for Price | 4.4A, 525V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STP11NM60N vs STP5N52K3 |
| STP10NM50N | STMicroelectronics | Check for Price | 7A, 500V, 0.63ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STP11NM60N vs STP10NM50N |
| STP95N2LH5 | STMicroelectronics | Check for Price | 95A, 25V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STP11NM60N vs STP95N2LH5 |
STP11NM60N Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) of the STP11NM60N is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure safe operation.
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The junction temperature of the STP11NM60N can be calculated using the thermal resistance (Rth) and the power dissipation (Pd) of the device. The formula is: Tj = Ta + (Rth * Pd), where Ta is the ambient temperature. The thermal resistance values can be found in the datasheet.
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The recommended PCB layout for the STP11NM60N involves using a multi-layer board with a solid ground plane, placing the device near the center of the board, and using short, wide traces for the power connections. Additionally, it's recommended to use a thermal pad and vias to dissipate heat efficiently. STMicroelectronics provides a reference design and layout guidelines in their application notes and evaluation boards.
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Yes, the STP11NM60N is qualified for automotive and high-reliability applications. It meets the requirements of the AEC-Q101 standard for automotive-grade devices and is designed to operate in harsh environments. However, it's essential to follow the recommended design and testing guidelines to ensure the device meets the specific requirements of the application.
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The selection of a gate driver for the STP11NM60N depends on the specific application requirements, such as the switching frequency, voltage, and current. STMicroelectronics provides a range of gate driver ICs that are compatible with the STP11NM60N, such as the STGAP1 series. The datasheet and application notes provide guidance on selecting the right gate driver and designing the gate drive circuit.