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Part Details for STP11N60DM2 by STMicroelectronics
Results Overview of STP11N60DM2 by STMicroelectronics
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STP11N60DM2 Information
STP11N60DM2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP11N60DM2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97Y9636
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Newark | Hv Mosfet Mdmesh |Stmicroelectronics STP11N60DM2 RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
497-16932-ND
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DigiKey | MOSFET N-CH 600V 10A TO220 Min Qty: 1 Lead time: 16 Weeks Container: Tube |
431 In Stock |
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$0.6693 / $1.8600 | Buy Now |
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DISTI #
STP11N60DM2
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Avnet Americas | STMSTP11N60DM2 - Bulk (Alt: STP11N60DM2) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Bulk | 0 |
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$0.6489 / $0.6979 | Buy Now |
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DISTI #
511-STP11N60DM2
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Mouser Electronics | MOSFETs N-channel 600 V, 370 mOhm typ 10 A MDmesh DM2 Power MOSFET RoHS: Compliant | 867 |
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$0.6690 / $1.8400 | Buy Now |
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STMicroelectronics | N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package RoHS: Compliant Min Qty: 1 | 867 |
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$0.8400 / $1.8100 | Buy Now |
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DISTI #
STP11N60DM2
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TME | Transistor: N-MOSFET, MDmesh™ DM2, unipolar, 600V, 6.3A, Idm: 40A Min Qty: 1 | 0 |
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$1.0800 / $1.6200 | RFQ |
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ComSIT USA | N-CHANNEL 600 V, 0.370 OHM TYP., 10 A MDMESH DM2 POWER MOSFET IN A TO-220 PACKAGE Power Field-Effect Transistor ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
STP11N60DM2
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IBS Electronics | STP11N60DM2 by STMicroelectronics is an N-Channel 600V 0.420 Ohm MDmesh DM2 Power MOSFET in a TO-220-3 package, ideal for high-efficiency power applications with flange mount design. Min Qty: 2000 Package Multiple: 1 | 0 |
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$1.0010 / $1.0530 | Buy Now |
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DISTI #
STP11N60DM2
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Avnet Silica | STMSTP11N60DM2 (Alt: STP11N60DM2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days | Silica - 2000 |
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Buy Now | |
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DISTI #
STP11N60DM2
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EBV Elektronik | STMSTP11N60DM2 (Alt: STP11N60DM2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STP11N60DM2
STP11N60DM2 CAD Models
STP11N60DM2 Part Data Attributes
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STP11N60DM2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP11N60DM2
STMicroelectronics
N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Manufacturer Package Code | TO-220AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
STP11N60DM2 Frequently Asked Questions (FAQ)
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The maximum operating junction temperature of the STP11N60DM2 is 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.
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The recommended gate drive voltage for the STP11N60DM2 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the STP11N60DM2, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current-sensing resistor.
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The maximum allowable power dissipation of the STP11N60DM2 is 150W, but this value can be derated based on the operating temperature and other factors.