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Automotive-grade dual N-channel 100 V, 25 mOhm typ., 7.8 A STripFET F3 Power MOSFET in PowerFLAT 5x6 double island package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STL8DN10LF3 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
45AC7623
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Newark | Mosfet, Aec-Q101, N-Ch, 100V, Powerflat, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:20A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STL8DN10LF3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 159 |
|
$1.3900 / $2.5200 | Buy Now |
DISTI #
497-13168-1-ND
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DigiKey | MOSFET 2N-CH 100V 20A POWERFLAT Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1989 In Stock |
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$0.8600 / $2.6100 | Buy Now |
DISTI #
STL8DN10LF3
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Avnet Americas | Power MOSFET, N Channel, 100 V, 20 A, 0.025 ohm, PowerFLAT, Surface Mount - Tape and Reel (Alt: STL8DN10LF3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$0.8600 / $0.9185 | Buy Now |
DISTI #
STL8DN10LF3
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Avnet Americas | Power MOSFET, N Channel, 100 V, 20 A, 0.025 ohm, PowerFLAT, Surface Mount - Tape and Reel (Alt: STL8DN10LF3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$0.8190 / $0.8709 | Buy Now |
DISTI #
511-STL8DN10LF3
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Mouser Electronics | MOSFETs Dual N-Ch 100V 7.8A 25mOhm STripFET III RoHS: Compliant | 3235 |
|
$0.8600 / $2.5600 | Buy Now |
DISTI #
E02:0323_06872209
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Arrow Electronics | Trans MOSFET N-CH 100V 20A 8-Pin Power Flat T/R Automotive AEC-Q101 Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks Date Code: 2441 | Europe - 3000 |
|
$0.8529 | Buy Now |
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STMicroelectronics | Automotive-grade dual N-channel 100 V, 25 mOhm typ., 7.8 A STripFET F3 Power MOSFET in PowerFLAT 5x6 double island package RoHS: Compliant Min Qty: 1 | 3235 |
|
$1.0200 / $2.5100 | Buy Now |
DISTI #
85914691
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Verical | Trans MOSFET N-CH 100V 20A 8-Pin Power Flat T/R Automotive AEC-Q101 Min Qty: 3000 Package Multiple: 3000 Date Code: 2441 | Americas - 3000 |
|
$0.8553 | Buy Now |
DISTI #
STL8DN10LF3
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TME | Transistor: N-MOSFET, unipolar Min Qty: 1 | 0 |
|
$1.1800 / $2.0900 | RFQ |
DISTI #
STL8DN10LF3
|
IBS Electronics | TRANSISTOR MOSFET ARRAY DUAL N-CH 100V 20A 8-PIN POWERFLAT T/R Min Qty: 3000 Package Multiple: 1 | 6000 |
|
$1.0595 | Buy Now |
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STL8DN10LF3
STMicroelectronics
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Datasheet
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STL8DN10LF3
STMicroelectronics
Automotive-grade dual N-channel 100 V, 25 mOhm typ., 7.8 A STripFET F3 Power MOSFET in PowerFLAT 5x6 double island package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | ROHS COMPLIANT, POWERFLAT-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 190 mJ | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.05 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 70 W | |
Pulsed Drain Current-Max (IDM) | 31.2 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature range for the STL8DN10LF3 is -40°C to 125°C.
The STL8DN10LF3 requires a single 1.8V power supply, and it's recommended to use a decoupling capacitor (e.g., 100nF) close to the VDD pin to ensure stable operation.
The maximum current rating for the STL8DN10LF3 is 20mA per pin, with a total current limit of 100mA for the entire device.
The STL8DN10LF3 can be configured for I2C or SPI communication by setting the MODE pin accordingly. For I2C, connect MODE to VDD, and for SPI, connect MODE to GND.
The WAKEUP pin is used to wake up the device from standby mode. It can be connected to an external interrupt source or a push-button to wake up the device.