Datasheets
STL20NM20N by: STMicroelectronics

20000mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 6 X 5 MM, CHIP SCALE, POWERFLAT-8

Part Details for STL20NM20N by STMicroelectronics

Results Overview of STL20NM20N by STMicroelectronics

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STL20NM20N Information

STL20NM20N by STMicroelectronics is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STL20NM20N

Part # Distributor Description Stock Price Buy
ComSIT USA N-CHANNEL 200 V-0.11 OHM-20 A POWERFLAT ULTRA LOW GATE CHARGE MDMESH MOSFET Small Signal Field-Effect Transistor, 20A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant Stock DE - 2000
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Vyrian Transistors 733
RFQ

Part Details for STL20NM20N

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STL20NM20N Part Data Attributes

STL20NM20N STMicroelectronics
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STL20NM20N STMicroelectronics 20000mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 6 X 5 MM, CHIP SCALE, POWERFLAT-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Package Description 6 X 5 MM, CHIP SCALE, POWERFLAT-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 12 pF
JESD-30 Code R-PDSO-N8
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 80 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

STL20NM20N Related Parts

STL20NM20N Frequently Asked Questions (FAQ)

  • STMicroelectronics provides a recommended PCB layout in their application note AN5046, which includes guidelines for thermal pad connection, copper pour, and via placement to minimize thermal resistance.

  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Additionally, consider using thermal management techniques such as heat sinks, thermal interfaces, and airflow to keep the device within its specified temperature range.

  • Although the datasheet specifies a maximum Vgs of ±20V, during startup, it's recommended to limit Vgs to ±10V to prevent damage to the internal ESD protection diodes. This is especially important when using a high-voltage startup circuit or a bootstrap capacitor.

  • Yes, the STL20NM20N is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, including rise and fall times, and ensure that the PCB layout and component selection are optimized for high-frequency operation.

  • To calculate power dissipation, use the formula Pd = (Vds x Ids) + (Vgs x Igs). Then, use the thermal resistance (Rthja) and maximum allowed junction temperature (Tj) to estimate the junction temperature. STMicroelectronics provides a thermal model and calculation tools to help with this process.

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