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Part Details for STL10N65M2 by STMicroelectronics
Results Overview of STL10N65M2 by STMicroelectronics
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STL10N65M2 Information
STL10N65M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STL10N65M2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-15052-1-ND
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DigiKey | MOSFET N-CH 650V 4.5A POWERFLAT Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2958 In Stock |
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$0.5869 / $1.9400 | Buy Now |
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DISTI #
STL10N65M2
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Avnet Americas | N-channel MDmesh >350 V to 700 V - Tape and Reel (Alt: STL10N65M2) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$0.5789 / $0.5943 | Buy Now |
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DISTI #
511-STL10N65M2
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Mouser Electronics | MOSFETs N-channel 650 V, 0.85 Ohm typ 4.5 A MDmesh M2 Power MOSFET RoHS: Compliant | 2500 |
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$0.5860 / $1.9000 | Buy Now |
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STMicroelectronics | N-channel 650 V, 0.85 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package COO: China RoHS: Compliant Min Qty: 1 | 2500 |
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$0.7700 / $1.6800 | Buy Now |
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DISTI #
STL10N65M2
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IBS Electronics | N-CHANNEL 650 V 0.85 OHM TYP. 4.5 A MDMESH M2 POWER MOSFET IN A POWERFLAT 5X6 HV PACKAGE Min Qty: 3000 Package Multiple: 1 | 0 |
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$0.8255 | Buy Now |
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DISTI #
STL10N65M2
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Avnet Silica | Nchannel MDmesh 350 V to 700 V (Alt: STL10N65M2) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days | Silica - 3000 |
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Buy Now | |
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DISTI #
STL10N65M2
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EBV Elektronik | Nchannel MDmesh 350 V to 700 V (Alt: STL10N65M2) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 650V 4.5A 850m10V2.5A 48W 2V 1 N-channel PQFN-8(5x6) MOSFETs ROHS | 2986 |
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$0.7438 / $1.3232 | Buy Now |
Part Details for STL10N65M2
STL10N65M2 CAD Models
STL10N65M2 Part Data Attributes
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STL10N65M2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STL10N65M2
STMicroelectronics
N-channel 650 V, 0.85 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
STL10N65M2 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the STL10N65M2 is typically defined by the voltage and current ratings. The device can operate safely within the boundaries of Vds = 650V, Id = 10A, and Pd = 100W. However, it's essential to consult the datasheet and application notes for specific guidance on SOA and thermal management.
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To ensure proper thermal management, it's crucial to provide a suitable heat sink, ensure good thermal interface material (TIM) between the device and heat sink, and maintain a low thermal resistance (Rth) between the junction and ambient. A thermal design should aim to keep the junction temperature (Tj) below 150°C for reliable operation.
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For optimal performance and minimal electromagnetic interference (EMI), follow these guidelines: keep the power loop area small, use a solid ground plane, and minimize track lengths. Place decoupling capacitors close to the device, and use a Kelvin connection for the gate driver. Consult the datasheet and application notes for more detailed guidance.
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When selecting a gate driver for the STL10N65M2, consider the following factors: peak current capability, voltage rating, rise and fall times, and input signal compatibility. Ensure the gate driver can provide a high enough current to charge and discharge the gate capacitance quickly, and that it's compatible with the device's gate-source voltage rating.
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The STL10N65M2 is a sensitive semiconductor device and requires proper ESD protection and handling precautions. Use an ESD wrist strap or mat, handle the device by the body or leads, and avoid touching the pins or die. Store the device in an anti-static bag or container, and follow proper soldering and assembly procedures.