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SLLIMM-nano small low-loss intelligent molded module IPM, 3-phase inverter, 1 A, 3.6 Ohm max., 500 V MOSFET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STIPNS1M50T-H by STMicroelectronics is a Motion Control Electronic.
Motion Control Electronics are under the broader part category of Signal Circuits.
A signal is an electronic means of transmitting information, either as an analog signal with continuous values or a digital signal with discrete values. Signals are used in various systems and networks. Read more about Signal Circuits on our Signal Circuits part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
84AC2878
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Newark | Power Module, Mosfet, 1A, 500V, Nsdip, Ipm Power Device:Mosfet, Voltage Rating (Vces/Vdss):500V, Current Rating (Ic/Id):1A, Isolation Voltage:1Kv, Ipm Case Style:Nsdip, Ipm Series:Sllimm-Nano, Product Range:-, Svhc:No Svhc Rohs Compliant: Yes |Stmicroelectronics STIPNS1M50T-H RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$7.7400 / $9.5800 | Buy Now |
DISTI #
STIPNS1M50T-H
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Avnet Americas | IPM Module MOSFET 21V 1000V 26-Pin NSDIP T/R - Tape and Reel (Alt: STIPNS1M50T-H) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$5.7715 / $5.8905 | Buy Now |
DISTI #
511-STIPNS1M50T-H
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Mouser Electronics | Motor / Motion / Ignition Controllers & Drivers SLLIMM-nano small low-loss intelligent molded module IPM, 3-phase inverter, 1 A, RoHS: Compliant | 0 |
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$6.0800 / $10.2400 | Order Now |
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STMicroelectronics | SLLIMM nano IPM, 3-phase inverter, 1 A, 3.6 Ohm max., 500 V, MOSFET RoHS: Compliant Min Qty: 1 | 0 |
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$6.3600 / $10.0400 | Buy Now |
DISTI #
STIPNS1M50T-H
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TME | IC: driver, IGBT three-phase bridge,NTC thermistor, SLLIMM nano Min Qty: 1 | 0 |
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$7.4400 / $10.4600 | RFQ |
DISTI #
STIPNS1M50T-H
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Avnet Silica | IPM Module MOSFET 21V 1000V 26Pin NSDIP TR (Alt: STIPNS1M50T-H) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 17 Weeks, 0 Days | Silica - 400 |
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Buy Now | |
DISTI #
STIPNS1M50T-H
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EBV Elektronik | IPM Module MOSFET 21V 1000V 26Pin NSDIP TR (Alt: STIPNS1M50T-H) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Other Function Semiconductors | 1135 |
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RFQ |
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STIPNS1M50T-H
STMicroelectronics
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Datasheet
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STIPNS1M50T-H
STMicroelectronics
SLLIMM-nano small low-loss intelligent molded module IPM, 3-phase inverter, 1 A, 3.6 Ohm max., 500 V MOSFET
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | NSDIP-28/26 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.39.00.01 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Analog IC - Other Type | AC MOTOR CONTROLLER | |
JESD-30 Code | R-PDMA-G26 | |
Length | 29.15 mm | |
Number of Functions | 1 | |
Number of Terminals | 26 | |
Operating Temperature-Max | 125 °C | |
Operating Temperature-Min | -40 °C | |
Output Current-Max | 2 A | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | DMA | |
Package Equivalence Code | MODULE,26LEAD,.67 | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Seated Height-Max | 3.45 mm | |
Supply Voltage-Max (Vsup) | 18 V | |
Supply Voltage-Min (Vsup) | 13.5 V | |
Supply Voltage-Nom (Vsup) | 15 V | |
Surface Mount | YES | |
Temperature Grade | AUTOMOTIVE | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 12.45 mm |
The maximum allowed voltage drop across the IGBT is typically around 2.5V to 3.5V, depending on the operating conditions. Exceeding this limit can lead to reduced efficiency and possible damage to the device.
To ensure proper thermal interface, apply a thin layer of thermal grease (e.g., Thermal Grizzly Kryonaut) to the IGBT's exposed metal surface. Then, secure the heat sink using screws or clips, taking care not to overtighten, which can damage the device.
The recommended gate resistance value is typically between 1 ohm and 10 ohm, depending on the specific application and switching frequency. A higher gate resistance can help reduce electromagnetic interference (EMI) but may slow down the switching speed.
While the STIPNS1M50T-H can be used in high-frequency switching applications, it's essential to consider the device's switching losses, which increase with frequency. The datasheet provides information on switching energy losses; ensure your design stays within the recommended limits to avoid overheating and reduce efficiency.
To protect the IGBT from voltage spikes and transients, use an appropriate voltage clamp circuit or a Transient Voltage Suppressor (TVS) diode in parallel with the IGBT. This helps absorb or clamp voltage surges, preventing damage to the device.