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Part Details for STI150N10F7 by STMicroelectronics
Results Overview of STI150N10F7 by STMicroelectronics
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STI150N10F7 Information
STI150N10F7 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STI150N10F7
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26Y5825
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Newark | Lv Mosfet Trench |Stmicroelectronics STI150N10F7 RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
STI150N10F7
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Avnet Americas | Power MOSFET, N Channel, 100 V, 110 A, 4.2 Milliohms, TO-262 (I2PAK), 3 Pins, Through Hole - Rail/Tube (Alt: STI150N10F7) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 111 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
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STMicroelectronics | N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in I2PAK package RoHS: Compliant Min Qty: 1 | 0 |
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$2.0000 / $3.1900 | Buy Now |
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DISTI #
STI150N10F7
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Avnet Silica | Power MOSFET N Channel 100 V 110 A 42 Milliohms TO262 I2PAK 3 Pins Through Hole (Alt: STI150N10F7) RoHS: Compliant Min Qty: 1000 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
STI150N10F7
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EBV Elektronik | Power MOSFET N Channel 100 V 110 A 42 Milliohms TO262 I2PAK 3 Pins Through Hole (Alt: STI150N10F7) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STI150N10F7
STI150N10F7 CAD Models
STI150N10F7 Part Data Attributes
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STI150N10F7
STMicroelectronics
Buy Now
Datasheet
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STI150N10F7
STMicroelectronics
N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in I2PAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | I2PAK, TO-262, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 495 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 110 A | |
| Drain-source On Resistance-Max | 0.0042 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 67 pF | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 440 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
STI150N10F7 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STI150N10F7 is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.
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The recommended gate drive voltage for the STI150N10F7 is between 10V and 15V, with a maximum voltage of 20V.
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To protect the STI150N10F7, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current-sensing resistor.
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The maximum allowable power dissipation for the STI150N10F7 is 150W, but this value can be derated based on the operating temperature and other factors.