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Part Details for STH3N150-2 by STMicroelectronics
Results Overview of STH3N150-2 by STMicroelectronics
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STH3N150-2 Information
STH3N150-2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STH3N150-2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-13876-1-ND
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DigiKey | MOSFET N-CH 1500V 2.5A H2PAK Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
7014 In Stock |
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$2.4766 / $5.7200 | Buy Now |
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DISTI #
511-STH3N150-2
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Mouser Electronics | MOSFETs N-CH 1500V 6Ohm 2.5A PowerMESH RoHS: Compliant | 1402 |
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$2.4700 / $5.6100 | Buy Now |
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DISTI #
E02:0323_06004554
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Arrow Electronics | Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(2+Tab) H2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks Date Code: 2442 | Europe - 7000 |
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$2.8878 | Buy Now |
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DISTI #
V72:2272_06560876
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Arrow Electronics | Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(2+Tab) H2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2405 Container: Cut Strips | Americas - 605 |
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$2.5410 / $5.5200 | Buy Now |
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Future Electronics | Single N-Channel 1500 V 9 Ohm 29.3 nC 140 W Silicon SMT Mosfet - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks Container: Reel | 0Reel |
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$2.5000 | Buy Now |
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Future Electronics | Single N-Channel 1500 V 9 Ohm 29.3 nC 140 W Silicon SMT Mosfet - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks Container: Reel | 0Reel |
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$2.7000 | Buy Now |
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DISTI #
86899892
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Verical | Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(2+Tab) H2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2442 | Americas - 7000 |
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$2.9033 | Buy Now |
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DISTI #
79050684
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Verical | Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(2+Tab) H2PAK T/R Min Qty: 12 Package Multiple: 1 | Americas - 934 |
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$3.0000 / $5.5600 | Buy Now |
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DISTI #
77587693
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Verical | Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(2+Tab) H2PAK T/R Min Qty: 3 Package Multiple: 1 Date Code: 2405 | Americas - 605 |
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$2.5410 / $5.5200 | Buy Now |
Part Details for STH3N150-2
STH3N150-2 CAD Models
STH3N150-2 Part Data Attributes
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STH3N150-2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STH3N150-2
STMicroelectronics
N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH power MOSFET in H2PAK-2 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | ROHS COMPLIANT, H2PAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 450 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1500 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 9 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
STH3N150-2 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STH3N150-2 is -40°C to 150°C.
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Proper cooling can be achieved through a combination of heat sinks, thermal interfaces, and airflow. Ensure the device is mounted on a suitable heat sink, and consider using thermal interface materials to minimize thermal resistance.
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The recommended gate drive voltage for the STH3N150-2 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage from voltage spikes and excessive current. Consider using a voltage regulator and current sense resistors to monitor and limit the device's operating conditions.
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Follow STMicroelectronics' recommended PCB layout guidelines, ensuring a low-inductance layout, and consider using a 4-layer PCB with a dedicated power plane and ground plane. Keep the device's pins as close as possible to the PCB's thermal vias.