Part Details for STH320N4F6-2 by STMicroelectronics
Results Overview of STH320N4F6-2 by STMicroelectronics
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Automotive
STH320N4F6-2 Information
STH320N4F6-2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STH320N4F6-2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-13875-1-ND
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DigiKey | MOSFET N-CH 40V 200A H2PAK Min Qty: 1 Lead time: 52 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
228 In Stock |
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$2.2500 / $5.8300 | Buy Now |
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DISTI #
STH320N4F6-2
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Avnet Americas | Trans MOSFET N-CH 40V 200A 3-Pin H2PAK T/R - Tape and Reel (Alt: STH320N4F6-2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
70390855
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RS | STH320N4F6-2 N-channel MOSFET Transistor, 200 A, 40 V, 3-Pin H2PAK Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$3.7300 | RFQ |
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STMicroelectronics | N-channel 40 V, 1.1 mOhm typ., 200 A STripFET F6 Power MOSFET in H2PAK-2 package COO: China RoHS: Compliant Min Qty: 1 | 944 |
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$2.7500 / $5.2100 | Buy Now |
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Bristol Electronics | 728 |
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RFQ | ||
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Quest Components | 582 |
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$4.1760 / $8.3520 | Buy Now |
Part Details for STH320N4F6-2
STH320N4F6-2 CAD Models
STH320N4F6-2 Part Data Attributes
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STH320N4F6-2
STMicroelectronics
Buy Now
Datasheet
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STH320N4F6-2
STMicroelectronics
N-channel 40 V, 1.1 mOhm typ., 200 A STripFET F6 Power MOSFET in H2PAK-2 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 200 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 175 °C | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Surface Mount | YES | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
STH320N4F6-2 Frequently Asked Questions (FAQ)
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STMicroelectronics provides a recommended PCB layout in their application note AN5046, which includes guidelines for thermal pad connection, copper thickness, and via placement to minimize thermal resistance.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow around the device.
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The maximum allowed voltage on the gate-source pin (Vgs) is ±20V, as specified in the datasheet. Exceeding this voltage can damage the device.
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To protect the STH320N4F6-2 from ESD, follow proper handling and storage procedures, use ESD-safe materials, and consider adding ESD protection devices, such as TVS diodes, in the circuit design.
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The recommended gate drive voltage is typically between 10V to 15V, and the current depends on the specific application and switching frequency. A general guideline is to use a gate drive current of 1A to 5A, but consult the datasheet and application notes for specific recommendations.