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Part Details for STH12N120K5-2AG by STMicroelectronics
Results Overview of STH12N120K5-2AG by STMicroelectronics
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
STH12N120K5-2AG Information
STH12N120K5-2AG by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STH12N120K5-2AG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-STH12N120K5-2AGCT-ND
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DigiKey | AUTOMOTIVE-GRADE N-CHANNEL 1200 Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
98 In Stock |
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$6.5354 / $13.0800 | Buy Now |
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DISTI #
STH12N120K5-2AG
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Avnet Americas | - Tape and Reel (Alt: STH12N120K5-2AG) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$6.3341 / $6.6181 | Buy Now |
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DISTI #
511-STH12N120K5-2AG
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Mouser Electronics | MOSFETs Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET RoHS: Compliant | 769 |
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$6.5300 / $12.4800 | Buy Now |
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STMicroelectronics | Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET in an H2PAK-2 package RoHS: Compliant Min Qty: 1 | 769 |
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$6.6500 / $12.2300 | Buy Now |
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DISTI #
STH12N120K5-2AG
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Avnet Silica | (Alt: STH12N120K5-2AG) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
STH12N120K5-2AG
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EBV Elektronik | (Alt: STH12N120K5-2AG) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 137 |
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RFQ |
Part Details for STH12N120K5-2AG
STH12N120K5-2AG CAD Models
STH12N120K5-2AG Part Data Attributes
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STH12N120K5-2AG
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STH12N120K5-2AG
STMicroelectronics
Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Peak Reflow Temperature (Cel) | 245 | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
STH12N120K5-2AG Frequently Asked Questions (FAQ)
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The maximum junction temperature for the STH12N120K5-2AG is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.
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To ensure proper cooling, make sure to attach a heat sink to the device, and apply a thermal interface material (TIM) to fill any gaps between the device and the heat sink. The heat sink should be designed to dissipate heat efficiently, and the system should be designed to provide adequate airflow.
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The recommended gate drive voltage for the STH12N120K5-2AG is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.
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To protect the device from overvoltage and overcurrent, use a voltage regulator or a DC-DC converter to regulate the input voltage, and add overcurrent protection circuits such as fuses or current sensors. Additionally, consider using a gate driver with built-in overcurrent protection.
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The recommended PCB layout for the STH12N120K5-2AG involves keeping the power loops as small as possible, using thick copper traces for high-current paths, and placing decoupling capacitors close to the device. A 2-layer or 4-layer PCB is recommended, with a solid ground plane to reduce EMI.