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Part Details for STH12N120K5-2 by STMicroelectronics
Results Overview of STH12N120K5-2 by STMicroelectronics
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
STH12N120K5-2 Information
STH12N120K5-2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STH12N120K5-2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2807273
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Farnell | MOSFET, N-CH, 1.2KV, 12A, H2PAK-2 RoHS: Compliant Min Qty: 1 Lead time: 16 Weeks, 1 Days Container: Cut Tape | 2288 |
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$8.6764 / $12.5502 | Buy Now |
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DISTI #
497-15425-1-ND
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DigiKey | MOSFET N-CH 1200V 12A H2PAK-2 Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2974 In Stock |
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$7.8694 / $12.1800 | Buy Now |
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DISTI #
STH12N120K5-2
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Avnet Americas | Power MOSFET, N Channel, 1.2 kV, 12 A, 0.62 ohm, H2PAK-2, Surface Mount - Tape and Reel (Alt: STH12N120K5-2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel | 19000 |
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$6.0271 / $6.2922 | Buy Now |
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DISTI #
STH12N120K5-2
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Avnet Americas | Power MOSFET, N Channel, 1.2 kV, 12 A, 0.62 ohm, H2PAK-2, Surface Mount - Tape and Reel (Alt: STH12N120K5-2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$6.2135 / $6.6360 | Buy Now |
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DISTI #
511-STH12N120K5-2
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Mouser Electronics | MOSFETs N-channel 1200 V, 0.62 Ohm typ 12 A MDmesh K5 Power MOSFET in H2PAK-2 package RoHS: Compliant | 673 |
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$6.2100 / $12.2300 | Buy Now |
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STMicroelectronics | N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in H2PAK-2 package RoHS: Compliant Min Qty: 1 | 673 |
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$6.1000 / $11.9900 | Buy Now |
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DISTI #
STH12N120K5-2
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IBS Electronics | N-CHANNEL 1200 V 0.62 OHM TYP. 12 A MDMESH K5 POWER MOSFET IN H2PAK-2 PACKAGE Min Qty: 1000 Package Multiple: 1 | 1000 |
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$7.9170 | Buy Now |
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Chip 1 Exchange | INSTOCK | 5000 |
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RFQ | |
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DISTI #
STH12N120K5-2
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Avnet Silica | Power MOSFET N Channel 12 kV 12 A 062 ohm H2PAK2 Surface Mount (Alt: STH12N120K5-2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days | Silica - 5000 |
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Buy Now | |
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DISTI #
STH12N120K5-2
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Avnet Silica | Power MOSFET N Channel 12 kV 12 A 062 ohm H2PAK2 Surface Mount (Alt: STH12N120K5-2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for STH12N120K5-2
STH12N120K5-2 CAD Models
STH12N120K5-2 Part Data Attributes
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STH12N120K5-2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STH12N120K5-2
STMicroelectronics
N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in H2PAK-2 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | ROHS COMPLIANT, H2PAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 215 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.69 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STH12N120K5-2
This table gives cross-reference parts and alternative options found for STH12N120K5-2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STH12N120K5-2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP12N120K5 | STMicroelectronics | $3.5390 | N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220 package | STH12N120K5-2 vs STP12N120K5 |
| STW12N120K5 | STMicroelectronics | $7.5447 | N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package | STH12N120K5-2 vs STW12N120K5 |
STH12N120K5-2 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the STH12N120K5-2 is typically defined by the device's voltage and current ratings. For this device, the maximum voltage rating is 1200V and the maximum current rating is 12A. Engineers should ensure that their application operates within these limits to prevent device damage or failure.
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Proper thermal management is crucial for the STH12N120K5-2. Engineers should ensure good heat sinking, such as using a heat sink with a thermal resistance of less than 1°C/W, and maintaining a maximum junction temperature (Tj) of 150°C. They should also consider the device's power dissipation (PD) and thermal impedance (Zth) when designing their application.
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The recommended gate drive circuits for the STH12N120K5-2 typically involve using a gate driver IC, such as the STMicroelectronics L638xE, along with a suitable gate resistor (Rg) and gate capacitor (Cg). The gate drive circuit should be designed to provide a fast switching time (tr and tf) and a suitable gate-source voltage (Vgs) to ensure proper device operation.
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To protect the STH12N120K5-2 from overvoltage and overcurrent, engineers can use a variety of techniques, including adding voltage clamping devices, such as transient voltage suppressors (TVS), and using current sensing and limiting circuits. They should also consider using a fuse or circuit breaker to protect against overcurrent conditions.
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The STH12N120K5-2 can generate electromagnetic interference (EMI) and radio-frequency interference (RFI) due to its high-frequency switching operation. Engineers should consider using EMI filters, shielding, and grounding techniques to minimize these effects and ensure compliance with relevant electromagnetic compatibility (EMC) standards.