Part Details for STH110N10F7-6 by STMicroelectronics
Results Overview of STH110N10F7-6 by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STH110N10F7-6 Information
STH110N10F7-6 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STH110N10F7-6
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70519961
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RS | MOSFET N-Channel 100V 110A H2PAK Min Qty: 50 Package Multiple: 1 Container: Bulk | 0 |
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$1.7500 / $1.8500 | RFQ |
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DISTI #
STH110N10F7-6
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EBV Elektronik | Trans MOSFET NCH 100V 110A 7Pin H2PAK TR (Alt: STH110N10F7-6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STH110N10F7-6
STH110N10F7-6 CAD Models
STH110N10F7-6 Part Data Attributes
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STH110N10F7-6
STMicroelectronics
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Datasheet
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STH110N10F7-6
STMicroelectronics
N-channel 100 V, 4.9 mOhm typ., 110 A STripFET F7 Power MOSFET in H2PAK-6 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 110 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 175 °C | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Surface Mount | YES | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
STH110N10F7-6 Frequently Asked Questions (FAQ)
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STMicroelectronics provides a recommended PCB layout in their application note AN5046, which includes guidelines for thermal pad connection, copper thickness, and via placement to ensure optimal thermal performance.
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You can calculate the junction temperature (Tj) using the formula: Tj = Tc + (Rthjc * Pd), where Tc is the case temperature, Rthjc is the junction-to-case thermal resistance, and Pd is the power dissipation. The thermal resistance values can be found in the datasheet.
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Although the datasheet specifies a maximum Vgs of ±20V, it's recommended to limit the voltage to ±15V to ensure reliable operation and prevent damage to the device.
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Yes, the STH110N10F7-6 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate drive requirements, and PCB layout to ensure reliable operation.
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When selecting a gate driver, consider the device's gate charge, peak current, and voltage requirements. STMicroelectronics provides a range of gate drivers, such as the STGAP2SiCS, that are compatible with the STH110N10F7-6.