Part Details for STFW60N65M5 by STMicroelectronics
Results Overview of STFW60N65M5 by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STFW60N65M5 Information
STFW60N65M5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STFW60N65M5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
70407445
|
RS | STFW60N65M5 N-channel MOSFET Transistor, 46 A, 710 V, 3-Pin TO-3PF Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
|
$14.1100 / $14.3600 | RFQ |
|
|
Bristol Electronics | 266 |
|
RFQ | ||
|
|
Quest Components | 212 |
|
$9.7344 / $13.6890 | Buy Now |
Part Details for STFW60N65M5
STFW60N65M5 CAD Models
STFW60N65M5 Part Data Attributes
|
|
STFW60N65M5
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STFW60N65M5
STMicroelectronics
46A, 650V, 0.059ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, TO-3PF, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-3PF | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 1400 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 46 A | |
| Drain-source On Resistance-Max | 0.059 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 63 W | |
| Pulsed Drain Current-Max (IDM) | 184 A | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STFW60N65M5
This table gives cross-reference parts and alternative options found for STFW60N65M5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STFW60N65M5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SIHW47N60E-GE3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 47A I(D), 600V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | STFW60N65M5 vs SIHW47N60E-GE3 |
| STW60N65M5 | STMicroelectronics | Check for Price | 46A, 650V, 0.059ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STFW60N65M5 vs STW60N65M5 |
| STW56NM60N | STMicroelectronics | Check for Price | 45A, 600V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STFW60N65M5 vs STW56NM60N |
STFW60N65M5 Frequently Asked Questions (FAQ)
-
The maximum junction temperature (Tj) of the STFW60N65M5 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
-
To calculate the power dissipation of the STFW60N65M5, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) from junction to ambient (Rth(j-a)). The power dissipation (Pd) can be calculated using the formula: Pd = (Vds * Ids) + (Rth(j-a) * Tj), where Vds is the drain-source voltage, Ids is the drain-source current, and Tj is the junction temperature.
-
The recommended gate drive voltage for the STFW60N65M5 is between 10V and 15V, with a maximum gate-source voltage (Vgs) of 20V. A higher gate drive voltage can help to reduce the turn-on resistance (Rds(on)) and improve the switching performance, but it also increases the risk of gate oxide damage.
-
Yes, the STFW60N65M5 is suitable for high-frequency switching applications up to 100 kHz. However, you need to consider the device's switching characteristics, such as the turn-on and turn-off times, and the gate drive requirements. You may also need to add external components, such as a gate driver and a snubber circuit, to ensure reliable operation and to reduce electromagnetic interference (EMI).
-
To protect the STFW60N65M5 from overvoltage and overcurrent, you can use external components such as a voltage regulator, a current limiter, and a fuse. You can also implement overvoltage and overcurrent detection circuits using voltage and current sensors, and use a microcontroller or a dedicated IC to monitor the device's operating conditions and shut it down in case of an fault.