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N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-3PF package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STFW40N60M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2807271
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Farnell | MOSFET, N-CH, 600V, 34A, TO-3PF RoHS: Compliant Min Qty: 1 Lead time: 18 Weeks, 1 Days Container: Each | 2 |
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$3.8763 / $4.8188 | Buy Now |
DISTI #
497-15538-5-ND
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DigiKey | MOSFET N-CH 600V 34A ISOWATT Min Qty: 1 Lead time: 14 Weeks Container: Tube |
265 In Stock |
|
$2.7054 / $3.9300 | Buy Now |
DISTI #
STFW40N60M2
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Avnet Americas | Trans MOSFET N-CH 34A 3-Pin TO-3PF Tube - Rail/Tube (Alt: STFW40N60M2) RoHS: Compliant Min Qty: 300 Package Multiple: 300 Lead time: 14 Weeks, 0 Days Container: Tube | 0 |
|
$2.5766 / $2.7396 | Buy Now |
DISTI #
511-STFW40N60M2
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Mouser Electronics | MOSFETs N-channel 600 V, 0.078 Ohm typ 34 A MDmesh M2 Power MOSFET in TO-3PF package RoHS: Compliant | 514 |
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$2.9900 / $5.7800 | Buy Now |
DISTI #
E02:0323_08682273
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Arrow Electronics | Trans MOSFET N-CH 600V 34A 3-Pin(3+Tab) TO-PF Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks Date Code: 2443 | Europe - 740 |
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$2.8197 / $2.9754 | Buy Now |
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STMicroelectronics | N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-3PF package RoHS: Compliant Min Qty: 1 | 514 |
|
$3.8500 / $5.6600 | Buy Now |
DISTI #
STFW40N60M2
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IBS Electronics | STFW40N60M2 by ST MICROELECTRONICS is a 600V, 40A N-channel MOSFET with low gate charge, fast switching, and high efficiency, ideal for power conversion applications. Min Qty: 300 Package Multiple: 1 | 0 |
|
$4.0560 / $4.4070 | Buy Now |
DISTI #
STFW40N60M2
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Avnet Silica | Trans MOSFET NCH 34A 3Pin TO3PF Tube (Alt: STFW40N60M2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 15 Weeks, 0 Days | Silica - 900 |
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Buy Now | |
DISTI #
STFW40N60M2
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EBV Elektronik | Trans MOSFET NCH 34A 3Pin TO3PF Tube (Alt: STFW40N60M2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 15 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
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LCSC | 600V 34A 88m 63W 4V 1 N-channel TO-3PF MOSFETs ROHS | 15 |
|
$5.6425 / $5.9609 | Buy Now |
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STFW40N60M2
STMicroelectronics
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Datasheet
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Compare Parts:
STFW40N60M2
STMicroelectronics
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-3PF package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 14 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
The maximum safe operating area (SOA) for the STFW40N60M2 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be estimated to be around 10A/100V for 10ms pulses.
To ensure proper cooling, consider the device's thermal resistance (Rth(j-a) = 1.5°C/W) and maximum junction temperature (Tj(max) = 150°C). Use a heat sink with a thermal resistance of around 1°C/W or less, and ensure good thermal contact between the device and heat sink. Also, consider airflow and thermal interface materials to minimize thermal resistance.
The recommended gate resistor value for the STFW40N60M2 depends on the specific application and switching frequency. A general guideline is to use a gate resistor between 10Ω to 100Ω to ensure proper switching and minimize ringing. However, a more detailed analysis of the gate drive circuit and PCB layout may be necessary to determine the optimal gate resistor value.
Yes, the STFW40N60M2 is suitable for high-frequency switching applications up to several hundred kHz. However, consider the device's switching losses, gate charge, and parasitic capacitances when designing the gate drive circuit and PCB layout. Also, ensure that the device is properly cooled and the thermal design is adequate for the increased power losses at high frequencies.
To protect the STFW40N60M2 from overvoltage and overcurrent, consider using a voltage clamp or transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or current limiter to detect and respond to overcurrent conditions. A protection circuit with a fast response time (e.g., <1μs) is recommended to prevent damage to the device.