Part Details for STFI13NM60N by STMicroelectronics
Results Overview of STFI13NM60N by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Smart Cities
Energy and Power Systems
Renewable Energy
Automotive
STFI13NM60N Information
STFI13NM60N by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STFI13NM60N
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
V79:2366_17790631
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Arrow Electronics | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) I2PAKFP Tube Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 1420 | Americas - 2493 |
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$1.1149 | Buy Now |
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DISTI #
26117062
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Verical | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) I2PAKFP Tube Min Qty: 6 Package Multiple: 1 Date Code: 1420 | Americas - 2493 |
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$1.1149 | Buy Now |
Part Details for STFI13NM60N
STFI13NM60N CAD Models
STFI13NM60N Part Data Attributes
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STFI13NM60N
STMicroelectronics
Buy Now
Datasheet
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STFI13NM60N
STMicroelectronics
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in I2PAKFP package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | ROHS COMPLIANT, I2PAKFP, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 220 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.36 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STFI13NM60N
This table gives cross-reference parts and alternative options found for STFI13NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STFI13NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| STF12NM60N | STMicroelectronics | Check for Price | 10A, 600V, 0.41ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220FP, 3 PIN | STFI13NM60N vs STF12NM60N |
| STF13NM60N-H | STMicroelectronics | Check for Price | 11A, 600V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220FP, 3 PIN | STFI13NM60N vs STF13NM60N-H |
STFI13NM60N Frequently Asked Questions (FAQ)
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The maximum junction temperature that the STFI13NM60N can withstand is 150°C. However, it's recommended to operate the device within a junction temperature range of -40°C to 125°C for optimal performance and reliability.
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To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a metal plate. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK between the device and the heat sink. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
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The recommended gate drive voltage for the STFI13NM60N is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
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Yes, the STFI13NM60N is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic capacitances when designing the application. Additionally, ensure proper PCB layout and decoupling to minimize electromagnetic interference (EMI).
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To protect the STFI13NM60N from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuitry. Consider using a voltage clamp or a transient voltage suppressor (TVS) to protect the device from voltage spikes. Additionally, use a current sense resistor and a comparator to detect overcurrent conditions and trigger a shutdown or fault protection mechanism.